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The ferroelectric domain plays an important role in determining the piezoelectric performance of ferroelectric ceramics. Herein, LiNbO 3 (LN) is used as an additive to tune the ferroelectric domain of 0.49Pb(Ni 1/3 Nb 2/3)O 3 -0.2Pb(In 1/2 Nb 1/2)O 3 -0.31PbTiO 3 (PNN-PIN-PT) ceramics. PNN-PIN-PT-0LN ceramic exhibits the ordered tetragonal phase (90 °) domain wall and rhombohedral phase (71 ° and 109 °) domain wall. Incorporating LN into the system leads to the transformation of the majority of structured macro-domains into random micro-domains with smaller sizes, which disrupt their long-range ordered ferroelectric domains, resulting in significant piezoelectric enhancement. Compared to PNN-PIN-PT-0LN ceramics, PNN-PIN-PT-1.8LN ceramics exhibit giant piezoelectric responses with d 33 = 1112 pC/N, d 31 =521 pC/N, d 33 * =1220 pm/V (@ E = 5 kV/cm), ε r = 12092. These findings shed light on a specific aspect of domain engineering in piezoelectric materials, thus contributing to a more comprehensive understanding of the underlying factors that give rise to the phenomenon of giant piezoelectricity. [ABSTRACT FROM AUTHOR]

Pulse ceramic capacitors that request particularly high reliability and long lifetime forbid over-applied electric field, hence demanding high energy density (W re) and energy storage efficiency (η) at low electric field. In this work, we investigated a lead lanthanum zirconate titanate (PLZT) ceramic featuring both of tetragonal antiferroelectric phase (AFE T) and relaxor characteristic, which emerge in converged area of PLZT phase diagram (mole ratio of La reaches ~10%). Temperature dependent permittivity and XRD analysis proves the crossover trait in this structure. In this special relaxor-like AFE T structure, decent W re (1.2–1.3 J cm−3) and η (86–90%) are achieved at 12 V μ m−1. Equivalent dielectric constant (ε eq) is also introduced to illustrate nonlinear energy storage performance at different electric field. Compared to common dielectric materials, tunable ε eq in relaxor-like AFE T structure shows advantages of excellent low-field energy density and wide working span, leading to the convenience in size design of capacitors. Finally, good energy storage stability under various external field was verified: ~1.00 J cm−3 in W re and ~92% in η were stabilized under varied frequency (< ± 8.9%, 0.01–2000 Hz), temperature (< ± 9.8%, −60 to 120 ℃) and fatigue loading (< ± 9.8%, >108 times) at ~10 V μ m−1. [ABSTRACT FROM AUTHOR]