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Abstract: BaSm2Ti4O12 (BST) film grown at room temperature was amorphous, while the film grown at 300°C was also amorphous but contained a small amount of crystalline Sm2Ti2O7 (ST). The crystalline BST phase was formed when the film was grown at 700°C and subjected to rapid thermal annealing (RTA) at 900°C. On the other hand, the ST phase was formed in the film grown at 300°C and subjected to RTA at 900°C. A high capacitance density of 2.12fF/μm2 and a low leakage current density of 1.15fA/pFV were obtained from the 150nm-thick BST film grown at 300°C. Its capacitance density could conceivably be further increased by decreasing the thickness of the film. It had linear and quadratic coefficients of capacitance of −785ppm/V and 5.8ppm/V2 at 100kHz, respectively. Its temperature coefficient of capacitance was also low, being approximately 255ppm/°C at 100kHz. [Copyright &y& Elsevier]