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Pulsed-laser deposited (Pb,Sr)TiO3(PSrT) films on Pt∕SiO2∕Sisubstrate deposited at various oxygen partial pressures (PO2), ranging from 50to200mTorr, were investigated in this work. PSrT films exhibit (100) preferred orientation at lower PO2and then transit to (110) preferred orientation above 100mTorr. The paraelectricity/ferroelectricity transition and dielectric constant of PSrT films are associated with the preferred orientation and oxygen concentration at various PO2. Furthermore, films deposited at higher PO2exhibit higher breakdown field and smaller leakage current density as a consequence of fewer oxygen vacancies. Except for the case of films deposited at 200mTorr, the conduction mechanism is identified as Schottky emission/Poole–Frenkel emission at low/high electric fields.