Search

Mesures DLTS des niveaux d'energie des pieges et de leurs concentrations suivant l'ordre de diffusion de Au et Pt (influence de la temperature). Interpretation par la presence de Au et Pt sur les memes sites de substitution dans Si

The effects of hydrogen annealing on reverse current-voltage characteristics of a zinc borosilicate glass passivated p-n junction with a negative net number of charges N at the glass-silicon interface have been studied. It was shown that a negative N contributed to raising the breakdown voltage, and the stepped reverse current-voltage characteristics could be found owing to this. The avalanche breakdown voltage and leakage current decreased with hydrogen annealing. These results were discussed in terms of a positive shift in the negative N associated with the decrease of the acceptor type interface trap density. The effective capture cross section in the glass-silicon system studied was found to be less than 5 x 10/sup -16/ cm/sup 2/.