1. Influence of Etching Current Density on Visible Electroluminescence from Porous n‐Si under Cathodic Bias
- Author
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Tae-Sik Kang, Heung‐Shik Park, and Kang‐Jin Kim
- Subjects
Silicon ,Renewable Energy, Sustainability and the Environment ,Hydride ,Photoelectrochemistry ,technology, industry, and agriculture ,Analytical chemistry ,chemistry.chemical_element ,Electrolyte ,Electroluminescence ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Blueshift ,chemistry ,Etching (microfabrication) ,Materials Chemistry ,Electrochemistry ,Extrinsic semiconductor - Abstract
Visible electroluminescence (EL) from cathodically biased n‐Si in an electrolyte solution containing has been studied. EL from the porous n‐Si samples fabricated by photoelectrochemical etching over a wide range of current densities shows both blueshift and peak broadening with increasing , which can be attributed to the progressive participation of more silicon hydride species, , with larger n in the emitting progress. Based on analysis of spectral changes and resolution of the EL peak into components, a revised mechanism of the EL, where silicon hydrides are considered to donate electrons to sulfate radical anions, is proposed. EL is produced by recombination of the resulting radical, , with an accumulated electron in the conduction band. The radicals would lead to competing reactions that strip off hydrogens from the surface silicon hydrides. with larger n is subject to the earlier EL. © 1999 The Electrochemical Society. All rights reserved.
- Published
- 1999