1. Electrical Conductivity in Electrodeposited Cu-Ge(O) Alloy Films
- Author
-
Fu Zhao, Silvia Pelegrini, Milton A. Tumelero, Yin Xu, Giovanni Zangari, and André A. Pasa
- Subjects
010302 applied physics ,Materials science ,Eletrodeposição ,Renewable Energy, Sustainability and the Environment ,Alloy ,02 engineering and technology ,engineering.material ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Condutividade elétrica ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Electrical resistivity and conductivity ,Filmes finos ,Ligas de cobre ,0103 physical sciences ,Materials Chemistry ,Electrochemistry ,engineering ,Composite material ,0210 nano-technology - Abstract
Integrated circuits currently use mainly copper as the interconnect material; unfortunately the ongoing miniaturization currently requires materials with higher electromigration resistance and possibly improved conductivity. In this context we report on the structure, microstructure and electrical properties of a series of Cu-Ge(O) alloy films, electrodeposited from an alkaline tartrate electrolyte. The composition of the films varies between zero and 20 at% Ge, with a significant incorporation of oxygen. Film morphology is dense and uniform, with Cu-Ge films exhibiting smaller apparent grain size (~50 nm) with respect to Cu films grown from a similar electrolyte. Solid solutions and phase mixtures of a solid solution with the intermetallic are observed with increasing Ge fraction; the presence of intermetallic phases is confirmed by TEM imaging and diffraction. The resistivity of 50 nm thick films follows the published trend, with a slight increase of the value upon solid solution formation and a minimum in correspondence of the intermetallic composition. Thicker films (~1 um) on the other hand show a different trend, with resistivity increasing with Ge and O at%; in this case the resistivity is probably dominated by the oxygen incorporation.
- Published
- 2018