1. Wafer-Sized Ultrathin Gallium and Indium Nitride Nanosheets through the Ammonolysis of Liquid Metal Derived Oxides
- Author
-
Guolin Zheng, Aaron Elbourne, Dorna Esrafilzadeh, Ali Zavabeti, Salvy P. Russo, Nitu Syed, Kibret A Messalea, Enrico Della Gaspera, Kourosh Kalantar-zadeh, Mohiuddin, Azmira Jannat, Lan Wang, Bao Yue Zhang, Christopher F McConville, and Torben Daeneke
- Subjects
Electron mobility ,Indium nitride ,business.industry ,Chemistry ,Band gap ,Oxide ,chemistry.chemical_element ,General Chemistry ,010402 general chemistry ,01 natural sciences ,Biochemistry ,Catalysis ,0104 chemical sciences ,chemistry.chemical_compound ,Colloid and Surface Chemistry ,Semiconductor ,Optoelectronics ,Wafer ,Gallium ,business ,Wurtzite crystal structure - Abstract
We report the synthesis of centimeter sized ultrathin GaN and InN. The synthesis relies on the ammonolysis of liquid metal derived two-dimensional (2D) oxide sheets that were squeeze-transferred onto desired substrates. Wurtzite GaN nanosheets featured typical thicknesses of 1.3 nm, an optical bandgap of 3.5 eV and a carrier mobility of 21.5 cm2 V-1 s-1, while the InN featured a thickness of 2.0 nm. The deposited nanosheets were highly crystalline, grew along the (001) direction and featured a thickness of only three unit cells. The method provides a scalable approach for the integration of 2D morphologies of industrially important semiconductors into emerging electronics and optical devices.
- Published
- 2018