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(CoxZn1–x)TiNb2O8 (x = 0.2–0.8) microwave dielectric ceramics were synthesized via the conventional solid‐state reaction route, and the correlation of microwave dielectric properties on the crystal structure was discussed. Crystal structures of ceramic samples were systematically investigated by X‐ray powder diffraction. Moreover, composition‐induced phase transitions were confirmed via the following sequence: for x ≤ 0.2, single‐phase orthorhombic ixiolite (ZnTiNb2O8) was formed, whereas for 0.3 ≤ x<0.8, ixiolite and rutile coexisted. When x ≥ 0.8, only single‐phase rutile was detected. For the (CoxZn1–x)TiNb2O8 ceramics, the microwave dielectric properties were changed with the crystal structural transitions: the dielectric constant (εr) and the temperature coefficient of resonant frequency (τf) increased upon increasing the Co2+, but the quality factor (Q) decreased. A near‐zero τf = +1.6 ppm/°C was obtained in the Co0.38Zn0.62TiNb2O8 ceramics with εr = 40.7 and high Q × f = 16 790 GHz. These research outcomes are expected to have great significance for developing microwave dielectric ceramics in practical applications. [ABSTRACT FROM AUTHOR]

Microwave dielectric ceramics with intrinsic low sintering temperatures are potential candidates for low temperature co‐fired ceramics technology. In the present work, the (Li0.5Y0.5)MoO4 ceramic with tetragonal scheelite structures was selected to improve microwave dielectric properties of BiVO4 ceramics. As proved by X‐ray diffraction (XRD) results, scheelite structured solid‐solution ceramics were formed with x value ≤0.1 in the (Bi1−xLi0.5xY0.5x)(V1−xMox)O4. In situ XRD results further confirmed that the addition of (Li0.5Y0.5)MoO4 also lowered transition temperature from distorted monoclinic to tetragonal scheelite structure. When x value increased further, zircon phase was detected by XRD. Room and high‐temperature Raman spectra also supported the XRD results. Differences of thermal expansion coefficients of both monoclinic and tetragonal scheelite phases lead to an abnormality at phase transition temperature. Good microwave dielectric properties with permittivity above 70 and Qf (Q = quality factor = 1/dielectric loss and f = frequency) value above 8000 GHz were obtained in the (Bi1−xLi0.5xY0.5x)(V1−xMox)O4 solid‐solution ceramics with x value ≤0.1 sintered below 800°C. However, permittivity peak values at phase transition temperatures lead to large positive or negative temperature coefficient of resonant frequency, and this needs to be modified via composite technologies in the future. [ABSTRACT FROM AUTHOR]