1. Effects of Y2 O3 -RE2 O3 (RE = Sm, Gd, Lu) Additives on Electrical and Thermal Properties of Silicon Carbide Ceramics
- Author
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Kwang-Young Lim, Young-Wook Kim, Kwang Joo Kim, Seoung-Jae Lee, and Seung Hoon Jang
- Subjects
010302 applied physics ,Materials science ,Metallurgy ,Oxide ,Sintering ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,chemistry.chemical_compound ,Thermal conductivity ,chemistry ,Electrical resistivity and conductivity ,visual_art ,0103 physical sciences ,Thermal ,Materials Chemistry ,Ceramics and Composites ,Silicon carbide ,visual_art.visual_art_medium ,Ceramic ,Composite material ,0210 nano-technology ,Order of magnitude - Abstract
In this study, we investigated the electrical and thermal properties of SiC ceramics with 2 vol% equimolar Y2O3–RE2O3 (RE = Sm, Gd, Lu) additives. The three SiC ceramics with 2 vol% equimolar Y2O3–RE2O3 additives showed electrical conductivities on the order of ~103 (Ω·m)−1, which is one order of magnitude higher than that of the SiC ceramics sintered with 2 vol% Y2O3 only. The increase in electrical conductivity is attributed to the growth of heavily nitrogen-doped SiC grains during sintering and the confinement of oxide additives in the junction area. The thermal conductivities of the SiC ceramics were in the 176–198 W·(m·K)−1 range at room temperature. The new additive systems, equimolar Y2O3–RE2O3, are beneficial for achieving both high electrical conductivity and high thermal conductivity in SiC ceramics.
- Published
- 2015