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As a typical hard and brittle material, gallium oxide crystal (β-Ga2O3) is easy to crack during processing. Diamond wire saw is the main way to produce β-Ga2O3 wafers. During the slicing process, a microcrack damage layer will be generated on the surface of the wafer. Under the stress, the microcracks will expand, leading to material breakage and fracture. In this paper, a finite element model of diamond wire sawing of β-Ga2O3 (010) crystal surface was established. The distribution of mechanical stress, thermal stress, and thermal-mechanical coupling stress during the sawing process were studied. The effects of sawing wire speed, feed speed and different parameter combinations under constant speed ratio on the thermal-mechanical coupling stress were analyzed. The research results show that: the thermal stress generated by sawing heat dominates the thermal-mechanical coupling stress during the sawing process; the mechanical stress caused by sawing force has a small numerical value and proportion, but it affects the distribution of thermal-mechanical coupling stress; increasing sawing wire speed and feed speed will increase the thermal-mechanical coupling stress. [ABSTRACT FROM AUTHOR]

In this paper, the effect of the process parameters of reciprocating diamond wire saw on the surface quality of the (001) plane β-Ga2 O3 single crystal was investigated. According to the theory of the indentation fracture mechanics, the abrasive behavior and material removal mechanism in the process of cutting β-Ga2 O3 single crystal with diamond wire saw were investigated. The influence of the cutting direction on the surface quality of the (001) plane β-Ga2 O3 single crystal was analyzed from the aspect of anisotropy, SEM and SJ-210 roughness measuring instrument were used to explore the effect of process parameters on the quality of wafer surface after diamond wire saw. The experimental results show that the depth of subsurface damage layer can be reduced and the surface quality of the wafer can be effectively improved by increasing the wire speed or decreasing the feed rate. [ABSTRACT FROM AUTHOR]

The developing trend in the IC manufacturing field is to increase the wafer diameter, decrease the wafer substrate thickness and decrease the semiconductor manufacturing process technology. As the semiconductor manufacturing process technology decrease to 5 nm, the requirement of wafer substrate quality of single crystal silicon is higher and higher. Slicing is the first machining process in chip substrate wafer manufacturing, and the diamond wire saw slicing is the main technology for the large size single crystal silicon slicing. In this paper, the development prospects and challenges of diamond wire saw slicing technology are introduced. The material removal mechanism of diamond wire saw slicing based on the single crystal silicon scratching and the 3D morphology modeling technology of electroplated diamond wire saw are presented. The mechanism of sliced wafer surface generation and crack damage are summarized. The technological measures of low crack damage slicing of single crystal silicon are prospected. The development trend of single crystal silicon slicing technology is pointed out. It is of great significance to the development of IC manufacturing technology. [ABSTRACT FROM AUTHOR]