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This paper portrays the effect of growth rate on the structural, magnetic, and electrical properties of sputtered Ni thin films. Seventy-five nanometer thick Ni films were grown on Si <100> substrates at room temperature by high power impulse magnetron sputtering with varying growth rates such as 0.27, 0.57, 1.01, 2.18, and 2.65 Å/s. All the films crystallized in a single FCC type structure devoid of any impurity phase. With an increase in the growth rate, the density of the Ni films was found to increase. The surface roughness and the stresses developed in Ni films were found to decrease with an increase in the growth rate. Microstructural investigations indicated an island of surface morphology for all the films. An increase in growth rate was also found to affect the magnetic properties of Ni thin films considerably. Saturation magnetization increased with an increase in growth rate both along the in-plane and out-of-direction owing to the increase in the density of the film and reduction in stresses and surface roughness. Further, the in-plane magnetization studies also showed an increase in in-plane magnetic anisotropy in Ni films with an increase in growth rate. Evidences for improvement in the in-plane magnetic anisotropy were derived from the increase in the in-plane coercivity and remanence. Temperature variation of electrical resistivity in Ni films indicated a metallic behavior. Films grown at higher growth rates exhibited high-temperature co-efficient of resistance suitable for resistance temperature detector applications. [ABSTRACT FROM AUTHOR]