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We present a new methodology for the mathematical analysis of 3D paper structure and apply it to a model that can be simulated on a computer. We rigorously derive upper and lower bounds for fiber contact areas, and derive an approximation that is very close to values calculated from the simulations. The method involves the stochastic geometry and combinatorics of large numbers of randomly located sets, which quantify the interactions between fibers. The main calculation involves a sum resembling a partition function with many-body interactions of all orders.

A new Markov process describing crystal growth in three dimensions is introduced. States of the process are configurations of the crystal surface, which has a terrace-edge-kink structure. The states are continuous along edges but discrete across edges, in accordance with the very different rates for the two types of captures of particles. Stationary distributions, describing steady crystal growth, are found in general. To our knowledge, these are the first examples of stationary distributions for layered crystal growth in three dimensions. The steady growth rate and other quantities are obtained explicitly for two interacting edges. For many interacting edges, growth behavior is determined (a) in various asymptotic regimes including thermodynamic limits, (b) via simulations, and (c) using series (cluster) expansions in the slope of the surface, the first three coefficients being computed. The theoretical growth rates show a marked dependence on surface dimensions. This may contribute to the size dependence and dispersion in the observed growth rate of small crystals.

Using a Markov rate-process model, exact expressions are found for the steady growth rate of an edge of a two-dimensional crystal in terms of the numberM of particles along the edge, the height difference (or number of permanent steps)K along the edge, the nucleation rate α, and the speed α+ν of movement of steps. The familiar growth regimes can be identified with asymptotic regimes for the parametersK, (v/α)1/2, andM. From a mathematical viewpoint, there are seven basic regimes, of which the known physical regimes are special cases.

We investigate properties of solid-on-solid models for crystal growth, involving general microscopic rates of capture of atoms by the crystal surface and of escape of atoms. The rates in this Markov process influence the stability of the growing surface. We prove, for various different ranges of the rate parameters, stability (i.e., ergodicity) and instability (i.e., nullity) of the growth process. Symmetry properties of the process, such as reversibility, dynamic reversibility, and reflection invariance, are proved or disproved under various conditions. We give a measure of surface smoothness that distinguishes between stable and unstable growth.

This paper discusses the mean-square displacement for a random walk on a two-dimensional lattice, whose transitions to nearest-neighbor sites are symmetric in the horizontal and vertical directions and depend on the column currently occupied. Under a uniform density condition for the step probabilities it is shown that the horizontal mean-square displacement aftern steps is asymptotically proportional ton, and independent of the particular column configuration. The model generalizes that of Seshadri, Lindenberg, and Shuler and the arguments are essentially probabilistic.

This paper considers the asymptotic distribution for the horizontal displacement of a random walk in a medium represented by a two-dimensional lattice, whose transitions are to nearest-neighbor sites, are symmetric in the horizontal and vertical directions, and depend on the column currently occupied. On either side of a change-point in the medium, the transition probabilities are assumed to obey an asymptotic density condition. The displacement, when suitably normalized, converges to a diffusion process of oscillating Brownian motion type. Various special cases are discussed.