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Abstract: The effects of Mn-doping on the crystal structure, magnetic and electrical/thermal transport properties of GaNCr3−x Mn x (0≤x≤1.5) have been investigated systematically. As a result, the lattice constant and the residual resistivity increase, while the residual resistivity ratio, electron thermal conductivity, and room-temperature carrier concentration decrease with increasing Mn-doping level. The ground state of parent compound GaNCr3 is nonmagnetic, interestingly, the ferrimagnetism and antiferromagnetism are observed in Mn-doped samples GaNCr3−x Mn x . Correspondingly, around the antiferromagnetic transition of GaNCr3−x Mn x the correlation effect is studied. Furthermore, the analysis of thermal conductivity data suggests that the electron thermal conductivity plays a major role in total thermal conductivity of GaNCr3 at low temperatures, while the phonon thermal conductivity is dominant for Mn-doped GaNCr3 in the whole temperature of 5–330K. The positive values of Seebeck coefficient and Hall coefficient indicate that the nature of charge carrier is hole-type in GaNCr3−x Mn x . [Copyright &y& Elsevier]