1. High supercapacitive performances of Cu-MOFs dominated by morphologies: Effects of solvents, surfactants and concentrations.
- Author
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Wang, Zikai, Guo, Xu, Dou, Wen, Wang, Kuaibing, Mao, Feifei, Wu, Hua, and Sun, Chuanhao
- Subjects
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SODIUM dodecyl sulfate , *SURFACE active agents , *SOLVENTS , *X-ray powder diffraction , *SUPERCAPACITOR electrodes , *SCANNING electron microscopy - Abstract
A series of identical hybrid structural Cu-MOFs with various morphologies have been synthesized under diverse conditions, including reaction solvents, surfactants and concentrations. The Cu-MOFs have been characterized by powder X-ray diffraction (PXRD) and scanning electron microscopy (SEM). Electrochemical performances of the as-synthesized materials have been evaluated through cyclic voltammetry (CV), galvanostatic charge-discharge (GCD), electrochemical impedance spectroscopy (EIS) and endurance-life tests. The results indicate that the slender rod shaped Cu-MOF E shows a high performance of 802 F g−1 at 0.5 A g−1 and no attenuation over 2000 GCD cycles. To promote the electrochemical performance, the flower-like Cu-MOF SDS has been obtained by using the selected sodium dodecyl sulfate. Then, the capacitive performance enhancement of Cu-MOF SDS has achieved approvingly, and the highest specific capacitance is 851 F g−1 at 0.5 A g−1. In this work, the solvents, surfactants and concentrations would be generating energetic effects on the morphological modulation and supercapacitive performances. A series of rGOs with different morphologies have been synthesized through modulating solvents, surfactants and concentrations. The slender rod shaped rGO E (synthesized in ethanol) shows a high performance of 802 F g−1 at 0.5 A g−1 and no attenuation in capacitance over 2000 GCD cycles. To improve the electrochemical performance, the sodium dodecyl sulfate (SDS) was added in the reaction and flower-like rGO SDS was obtained. Then, the capacitive performance enhancement of Cu-MOF SDS has been achieved approvingly, and the highest specific capacitance of 851 F g−1 at the current density of 0.5 A g−1. Further, the mechanism of this work has been explored elaborately. Image 1 [ABSTRACT FROM AUTHOR]
- Published
- 2020
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