1. Improved interfacial properties of GaAs MOS capacitor with NH3-plasma-treated ZnON as interfacial passivation layer
- Author
-
Jing-Ping Xu, Jingkang Gong, Yaoyao Feng, Xiaoyu Liu, Han-Han Lu, and Lu Liu
- Subjects
010302 applied physics ,Mos capacitor ,Materials science ,Passivation ,business.industry ,Radical ,Gate dielectric ,Gate leakage current ,Plasma treatment ,02 engineering and technology ,Plasma ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,0103 physical sciences ,Materials Chemistry ,Electronic engineering ,Optoelectronics ,Electrical and Electronic Engineering ,0210 nano-technology ,business ,Layer (electronics) - Abstract
The GaAs MOS capacitor was fabricated with HfTiON as high- k gate dielectric and NH 3 -plasma-treated ZnON as interfacial passivation layer (IPL), and its interfacial and electrical properties are investigated compared to its counterparts with ZnON IPL but no NH 3 -plasma treatment and without ZnON IPL and no plasma treatment. Experimental results show that low interface-state density near midgap (1.17×10 12 cm -2 eV -1 ) and small gate leakage current density have been achieved for the GaAs MOS device with the stacked gate dielectric of HfTiON/ZnON plus NH 3 -plasma treatment. These improvements could be ascribed to the fact that the ZnON IPL can effectively block in-diffusion of oxygen atoms and out-diffusion of Ga and As atoms, and the NH 3 -plasma treatment can provide not only N atoms but also H atoms and NH radicals, which is greatly beneficial to removal of defective Ga/As oxides and As-As band, giving a high-quality ZnON/GaAs interface.
- Published
- 2017