1. Formation of long-range stripe patterns with sub-10-nm half-pitch from directed self-assembly of block copolymer
- Author
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Yasuhiko Tada, Nikos Hadjichristidis, Hiroshi Yoshida, Shusuke Aburaya, Mikihito Takenaka, Hirokazu Hasegawa, George Sakellariou, and Satoshi Akasaka
- Subjects
Directed self assembly ,Range (particle radiation) ,Materials science ,Nanostructure ,Polymers and Plastics ,business.industry ,Substrate (electronics) ,Grating ,Condensed Matter Physics ,block copolymers ,thin films ,Si substrate ,directed self-assembly ,Polymer chemistry ,Materials Chemistry ,Copolymer ,Optoelectronics ,Physical and Theoretical Chemistry ,Thin film ,business - Abstract
We have demonstrated directed self-assembly of poly(styrene-b-dimethylsiloxiane) (PS-b-PDMS) down to sub- 10-nm half-pitch by using grating Si substrate coated with PDMS. The strong segregation between PS and PDMS enables us to direct the self-assembly in wide grooves of the grating substrate up to 500 nm in width. This process can be applied to form various type of sub-10-nm stripe pattern along variety of grating shape. V C 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 48: 2297-2301, 2010
- Published
- 2010
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