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Tin oxide (SnO2) has garnered significant attention for its high spectral selectivity when used as an ultraviolet photodetector (PD). In this study, SnO2 nanosheets (NSs) were synthesized via a hydrothermal method, followed by spin-coating a layer of Ga2O3 thin film to construct a heterojunction photoelectrochemical ultraviolet PD (PEC UV PD). Initially, we investigated the effect of precursor composition on the properties of the Ga2O3 thin films. It was observed that the thickness of the films increased with higher precursor concentrations, while the optical bandgap decreased. Based on these findings, we successfully fabricated the SnO2 NSs-Ga2O3 PEC UV PD. Electrochemical analysis revealed that as the precursor concentration used for spin-coating Ga2O3 increased, the device's responsivity and detectivity initially increased and then decreased. After optimization, the device prepared with a 0.2 M Ga(NO3)3 solution spin-coated on SnO2 exhibited excellent spectral selectivity (R 265nm/ R 420nm ∼ 4472), a responsivity of 4.86 mA W−1, and a detectivity of 2.72 × 109 Jones. This study demonstrates that coating Ga2O3 is an effective approach to constructing high-performance SnO2-based UV PDs. [ABSTRACT FROM AUTHOR]

Tin oxide (SnO2) has garnered significant attention for its high spectral selectivity when used as an ultraviolet photodetector (PD). In this study, SnO2 nanosheets (NSs) were synthesized via a hydrothermal method, followed by spin-coating a layer of Ga2O3 thin film to construct a heterojunction photoelectrochemical ultraviolet PD (PEC UV PD). Initially, we investigated the effect of precursor composition on the properties of the Ga2O3 thin films. It was observed that the thickness of the films increased with higher precursor concentrations, while the optical bandgap decreased. Based on these findings, we successfully fabricated the SnO2 NSs-Ga2O3 PEC UV PD. Electrochemical analysis revealed that as the precursor concentration used for spin-coating Ga2O3 increased, the device's responsivity and detectivity initially increased and then decreased. After optimization, the device prepared with a 0.2 M Ga(NO3)3 solution spin-coated on SnO2 exhibited excellent spectral selectivity (R 265nm/ R 420nm ∼ 4472), a responsivity of 4.86 mA W−1, and a detectivity of 2.72 × 109 Jones. This study demonstrates that coating Ga2O3 is an effective approach to constructing high-performance SnO2-based UV PDs. [ABSTRACT FROM AUTHOR]