1. The tunneling magnetoresistance and spin-polarized optoelectronic properties of graphyne-based molecular magnetic tunnel junctions
- Author
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Guoqing Lan, Ruiping Liu, Li-Chun Xu, Xuguang Liu, Bin Ouyang, and Zhi Yang
- Subjects
Physics ,Acoustics and Ultrasonics ,Spins ,Magnetoresistance ,business.industry ,02 engineering and technology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Graphyne ,Magnetization ,0103 physical sciences ,Ultraviolet light ,Optoelectronics ,Density functional theory ,010306 general physics ,0210 nano-technology ,business ,Antiparallel (electronics) ,Quantum tunnelling - Abstract
Using density functional theory and the non-equilibrium Green's function method, we investigate the spin-dependent transport and optoelectronic properties of the graphyne-based molecular magnetic tunnel junctions (MMTJs). We find that these MMTJs exhibit an outstanding tunneling magnetoresistance (TMR) effect. The TMR value is as high as 106%. When the magnetization directions of two electrodes are antiparallel under positive or negative bias voltages, two kinds of pure spin currents can be obtained in the systems. Furthermore, under the irradiation of infrared, visible or ultraviolet light, spin-polarized photocurrents can be generated in the MMTJs, but the corresponding microscopic mechanisms are different. More importantly, if the magnetization directions of two electrodes are antiparallel, the photocurrents with different spins are spatially separated, appearing at different electrodes. This phenomenon provides a new way to simultaneously generate two spin currents.
- Published
- 2017
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