1. Silicon Carbide devices for radiation detection and measurements
- Author
-
Maurizio Boscardin, Alberto Fazzi, G. Gorini, Giada Petringa, G.A.P. Cirrone, S. M. R. Puglia, Dario Giove, G. Lanzalone, A. Muoio, Andrea Santangelo, F. La Via, Marica Rebai, Antonio Trifiro, G Pasquali, S. Tudisco, C. Altana, and C. Ciampi
- Subjects
History ,Materials science ,Silicon Carbide ,business.industry ,radiation detection ,Particle detector ,Computer Science Applications ,Education ,chemistry.chemical_compound ,chemistry ,Silicon carbide ,radiation measurement ,Optoelectronics ,business - Abstract
In the last decades Silicon Carbide (SiC) received special attentions, in particular as semiconductor material, because is considered as alternative to Silicon for the future high-power, low consumption, radiation-hard microelectronics devices. This ambitious goal is particularly interesting also for the physics of the detectors. In this work are discussed some of the recent results obtained by SiCILIA collaboration, a joint research activity between INFN and IMM institutions to increase the level of technological development in the field of SiC detectors.
- Published
- 2020
- Full Text
- View/download PDF