1. Coulomb gap measurement in non-compensated Si:As
- Author
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S Sanguinetti, G Pignatel, Pignatel, G, and Sanguinetti, S
- Subjects
Silicon ,Condensed matter physics ,Chemistry ,Band gap ,Doping ,Semiconductor ,Atmospheric temperature range ,Condensed Matter Physics ,Molecular electronic transition ,Ion implantation ,Electrical resistivity and conductivity ,Metal-Insulator Transition ,Coulomb ,Density of states ,Condensed Matter::Strongly Correlated Electrons ,General Materials Science ,FIS/03 - FISICA DELLA MATERIA - Abstract
We report resistivity measurements in the temperature range 0.15-1.2 K Performed on non-compensated Si:As samples doped by ion implantation on the insulating side of the metal-insulator transition. The data show a crossover of the variable-range-hopping (VRH) resistivity dependence rho(T) from rho is-proportional-to exp(T1/4/T)1/4 (Mott VRH predicted behaviour) to rho is-proportional-to exp(T1/2/T)1/2, which demonstrates the persistence of a Coulomb pp in the density of states even in the vicinity of the critical concentration. The simultaneous observation of the T1/4 and T1/2 parameters allows the determination of the effective size of the pp.
- Published
- 1993
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