1. The growth and morphology of epitaxial multilayer graphene
- Author
-
E. H. Conrad, J. Hass, and W. A. de Heer
- Subjects
Materials science ,Graphene ,Stacking ,Nanotechnology ,Electronic structure ,Condensed Matter Physics ,Epitaxy ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,Silicon carbide ,General Materials Science ,Scanning tunneling microscope ,Electronic band structure ,Graphene nanoribbons - Abstract
The electronic properties of epitaxial graphene grown on SiC have shown its potential as a viable candidate for post-CMOS electronics. However, progress in this field requires a detailed understanding of both the structure and growth of epitaxial graphene. To that end, this review will focus on the current state of epitaxial graphene research as it relates to the structure of graphene grown on SiC. We pay particular attention to the similarity and differences between graphene growth on the two polar faces, (0001) and , of hexagonal SiC. Growth techniques, subsequent morphology and the structure of the graphene/SiC interface and graphene stacking order are reviewed and discussed. Where possible the relationship between film morphology and electronic properties will also be reviewed.
- Published
- 2008
- Full Text
- View/download PDF