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Understanding the dynamics of charge transfer at vertical heterostructures of transition metal dichalcogenide monolayers is fundamentally important for future technological applications, given the unique feature of van der Waals interactions at the interface. Here, we employ time-dependent density functional theory formalism combined with molecular dynamics to investigate photoexcited electrons and holes in the type-I MoS 2 /PtSe 2 van der Waals heterobilayer. While type-I junctions have been traditionally viewed as being ineffective in photocarrier separation, we show that here a different mechanism from type-II is at play, which effectively separates photoelectrons from photoholes. The key is the phonon bottleneck, arising from the characteristically different dynamic band alignments in the valence and conduction bands, respectively, which only affects the transfer of holes but not electrons. The disparity between electron and hole transfer rates offers a new direction for effective control of charge separation at interfaces.

Molecular linkers, such as cysteine, are used to stabilize colloidal quantum dots (QDs) and anchor them. Despite the typically large molecular HOMO/LUMO gap of linkers, they can increase the quantum yield and provide an effective charge-transfer channel. Through first-principles calculations, we investigate the ligand binding and the implications for charge transfer using a prototypical CdSe-Cysteine-MoS 2 three-way heterostructure. We find that the deprotonated ligand interacts with both sides of the heterostructure, which allows for successful self-passivation of the cysteine ligand molecule and the formation of dative bonds with a greatly reduced molecular gap compared with the gas phase. This leads to the formation of a charge-transfer state that is delocalized across the ligand and can directly assist electron transfer from the conduction band of colloidal CdSe QDs to the underlying MoS 2 substrate, which is a mechanism that could extend far beyond 0D-2D hybrid systems.

Two-dimensional (2D) monolayer-bilayer (ML-BL) lateral junctions (LJs) have recently attracted attention due to their straightforward synthesis and resulting clean interface. Such systems consist of an extended ML with a secondary layer present only over half of the system, leading to an interface that is associated with the terminating edge of the secondary half layer. Our first-principles calculations reveal that the edges of the half layer completely lack reconstruction in the presence of unintentional dopants, in this case, Re. This observation is in startling contrast to the known physics of three-dimensional (3D) semiconductor surfaces where reconstruction has been widely observed. Herein, the electrostatics of the reduced dimensionality allows for greater separation between compensating defects, enabling dopants to remotely passivate edge states without needing to directly participate in the chemistry.

Carrier dynamics across the interface of heterostructures have important technological, photovoltaic, and catalytic implications. Using first-principles time-dependent density functional theory, we have systematically investigated the charge transfer of excited carriers from CdS to MoS 2 and found that two interdependent mechanisms are responsible for the transfer, one slow and one fast. While the slower process may be attributed to typical electron-phonon coupling, the interfacial dipole resulting from this transfer enables a fast secondary process involving a level crossing of the excited carrier state in CdS with receiving states in MoS 2 . An analysis based on the interfacial binding energy reveals that the Cd-terminated (001) interface is by far the most energetically favorable, which in addition to its calculated fast resonant electron transfer suggests it is a good candidate to explain the experimentally observed charge transfer between CdS and MoS 2 .

As an intensively studied electrode material for secondary batteries, TiS 2 is known to exhibit high electrical conductivity without extrinsic doping. However, the origin of this high conductivity, either being a semimetal or a heavily self-doped semiconductor, has been debated for several decades. Here, combining quasi-particle GW calculations, density functional theory (DFT) study on intrinsic defects, and scanning tunneling microscopy/spectroscopy (STM/STS) measurements, we conclude that stoichiometric TiS 2 is a semiconductor with an indirect band gap of about 0.5 eV. The high conductivity of TiS 2 is therefore caused by heavy self-doping. Our DFT results suggest that the dominant donor defect that is responsible for the self-doping under thermal equilibrium is Ti interstitial, which is corroborated by our STM/STS measurements.

Understanding how the structures of a crystal behave under compression is a fundamental issue both for condensed matter physics and for geoscience. Traditional description of a crystal as the stacking of a unit cell with special symmetry has gained much success on the analysis of physical properties. Unfortunately, it is hard to reveal the relationship between the compressed phases. Taking the family of metal dioxides (MO 2 ) as an example, the structural evolution, subject to fixed chemical formula and highly confined space, often appears as a set of random and uncorrelated events. Here we provide an alternative way to treat the crystal as the stacking of the coordination polyhedron and then discover a unified structure transition pattern, in our case VO 2 . X-ray diffraction (XRD) experiments and first-principles calculations show that the coordination increase happens only at one apex of the V-centered octahedron in an orderly fashion, leaving the base plane and the other apex topologically intact. The polyhedron evolves toward increasing their sharing, indicating a general rule for the chemical bonds of MO 2 to give away the ionicity in exchange for covalency under pressure.

Electron-phonon coupling can hamper carrier transport either by scattering or by the formation of mass-enhanced polarons. Here, we use time-dependent density functional theory-molecular dynamics simulations to show that phonons can also promote the transport of excited carriers. Using nonpolar InAs (110) surface as an example, we identify phonon-mediated coupling between electronic states close in energy as the origin for the enhanced transport. In particular, the coupling causes localized excitons in the resonant surface states to propagate into bulk with velocities as high as 10(6) cm/s. The theory also predicts temperature enhanced carrier transport, which may be observable in ultrathin nanostructures.