1. Correlation between the photoluminescence and different types of Si nano-clusters in amorphous silicon
- Author
-
Larysa Khomenkova, L. Shcherbyna, Tetyana Torchynska, Georgiy Polupan, A.L. Quintos Vazquez, and Yasuhiro Matsumoto
- Subjects
Amorphous silicon ,Materials science ,Photoluminescence ,Silicon ,Analytical chemistry ,Mineralogy ,chemistry.chemical_element ,Chemical vapor deposition ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Amorphous solid ,chemistry.chemical_compound ,chemistry ,Nanocrystal ,X-ray crystallography ,Materials Chemistry ,Ceramics and Composites ,Wafer - Abstract
This paper presents the results of PL spectrum study for Si nano-clusters in amorphous silicon matrix. The hydrogenated amorphous Si layers were prepared by the hot-wire CVD method on glass substrates. The layers were deposited at different wafer temperatures 280, 360, 420 and 460 °C and at one filament temperature of 1650 °C. The joint analysis of PL and X-ray diffraction spectra in dependence on the technological conditions and on different sizes of Si nano-clusters has been done. The mechanisms of PL are discussed as well.
- Published
- 2008
- Full Text
- View/download PDF