1. Interfacial Layer Control by Dry Cleaning Technology for Polycrystalline and Single Crystalline Silicon Growth
- Author
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Young-Seok Kim, Han-jin Lim, Myoungho Jeong, Bong-Hyun Kim, Ki-Vin Im, Kong-Soo Lee, Yoongoo Kang, Jeong Yong Lee, Jin-Won Ma, Soon-Gun Lee, Dong-Hyun Im, and Kwang Wuk Park
- Subjects
Materials science ,Silicon ,Passivation ,Biomedical Engineering ,Nanocrystalline silicon ,Oxide ,chemistry.chemical_element ,Wet cleaning ,Bioengineering ,02 engineering and technology ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Epitaxy ,Crystallography ,chemistry.chemical_compound ,chemistry ,Chemical engineering ,General Materials Science ,Crystalline silicon ,0210 nano-technology ,Layer (electronics) - Abstract
Native oxide removal prior to poly-Si contact and epitaxial growth of Si is the most critical technology to ensure process and device performances of poly-Si plugs and selective epitaxial growth (SEG) layers for DRAM, flash memory, and logic device. Recently, dry cleaning process for interfacial oxide removal has attracted a world-wide attention due to its superior passivation properties to conventional wet cleaning processes. In this study, we investigated the surface states of Si substrate during and after dry cleaning process, and the role of atomic elements including fluorine and hydrogen on the properties of subsequent deposited silicon layer using SIMS, XPS, and TEM analysis. The controlling of residual fluorine on the Si surface after dry cleaning is a key factor for clean interface. The mechanism of native oxide re-growth caused by residual fluorine after dry cleaning is proposed based on analytical results.
- Published
- 2016
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