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Sol-gel dip-coating technique has adapted a thin film of CH3NH3PbI2Br (MAPbI2Br) on a glass FTO substrate. The structure of the film shown from the X-ray diffraction is cubic, and the appearance indicates that the film is significantly crystalline. The V2+ 5%-doped film demonstrated a significant geometric increase in the crystallite size to 34.52 nm, a sharp decrease in the bandgap energy to 1.79 eV, an elevation in the refractive index to 2.41, and a decrease in the extinction coefficient to 1.66. Additionally, this material's conduction band edge complements the TiO2 electron transport layer appropriately. On the other hand, we constructed solar cells using the FTO/TiO2/MAPbI2Br/spiro-OMeTAD/Au configuration. Doping the MAPbI2Br film with 5% V2+ yielded the most remarkable results. It had a current density of 8.42 mA/cm2, an open-circuit voltage of 1.04 V, a fill factor of 0.76, and an efficiency of 6.58%. However, the electrochemical impedance spectroscopy (EIS) results for the same cell show that the device with 5% V2+ doping has a lower recombination rate than solar cells. This work has demonstrated that the doping effect of V2+ in the MAPbI2Br perovskite films, made of the 5% V-doped modification in the form of solar cells, improves performance and lays the groundwork for future advancements in provskite solar cells. [ABSTRACT FROM AUTHOR] more...