1. Raman Spectroscopy of DLC/a-Si Bilayer Film Prepared by Pulsed Filtered Cathodic Arc
- Author
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Piyapong Asanithi, Krisda Siangchaew, Artorn Pokaipisit, Supanee Limsuwan, Pichet Limsuwan, and C. Srisang
- Subjects
Materials science ,Article Subject ,Bilayer ,Analytical chemistry ,chemistry.chemical_element ,Germanium ,Substrate (electronics) ,Sputter deposition ,Cathodic protection ,symbols.namesake ,chemistry ,Amorphous carbon ,lcsh:Technology (General) ,symbols ,lcsh:T1-995 ,General Materials Science ,Raman spectroscopy ,Layer (electronics) - Abstract
DLC/a-Si bilayer film was deposited on germanium substrate. The a-Si layer, a seed layer, was firstly deposited on the substrate using DC magnetron sputtering and DLC layer was then deposited on the a-Si layer using pulsed filtered cathodic arc method. The bilayer films were deposited with different DLC/a-Si thickness ratios, including 2/2, 2/6, 4/4, 6/2, and 9/6. The effect of DLC/a-Si thickness ratios on the sp3content of DLC was analyzed by Raman spectroscopy. The results show that a-Si layer has no effect on the structure of DLC film. Furthermore, the upper shift inGwavenumber and the decrease inID/IGinform that sp3content of the film is directly proportional to DLC thickness. The plot modified from the three-stage model informed that the structural characteristics of DLC/a-Si bilayer films are located close to the tetrahedral amorphous carbon. This information may be important for analyzing and developing bilayer protective films for future hard disk drive.
- Published
- 2012
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