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Context and results : In this paper, the crystal structure, electronic, optical, and mechanical properties of SrVO3 have been systematically studied by first-principles calculation. The results show that the calculated lattice parameters are in good agreement with the experimental values of X-ray diffraction. The density of states is described in detail in this paper. By analyzing the crystal structure and electronic properties of SrVO3, the magnetic properties of SrVO3 are obtained from the one unpaired electrons of V and the exchange interaction between two V ions. At the same time, a detailed analysis of the optical properties of SrVO3 was conducted, and it was found that it is transparent in the visible light range. Finally, the mechanical properties of SrVO3 are calculated, which can provide some references for future research. Computational method: In this paper, a first-principles method based on density functional theory (DFT) is reported for PBE-GGA analysis using the plane wave-pseudo potential method in a quantum concentrate packet, U value of 7 eV to V-d and a U value of 2 eV to O-p, Grimme correction by DFT-D method. The k points in the Brillouin region are set to 4 × 4 × 4. The energy convergence criterion for self-consistent field calculation is set at 5.0 × 10−6 eV/atom, and the cutoff energy is 1170 eV. In this paper, the force acting on each atom is not more than 0.01 eV/Å, the maximum stress is not more than 0.02GPa, and the maximum atomic displacement is 5 × 10−4 Å. [ABSTRACT FROM AUTHOR]

Context and results : In this paper, the crystal structure, electronic, optical, and mechanical properties of SrVO3 have been systematically studied by first-principles calculation. The results show that the calculated lattice parameters are in good agreement with the experimental values of X-ray diffraction. The density of states is described in detail in this paper. By analyzing the crystal structure and electronic properties of SrVO3, the magnetic properties of SrVO3 are obtained from the one unpaired electrons of V and the exchange interaction between two V ions. At the same time, a detailed analysis of the optical properties of SrVO3 was conducted, and it was found that it is transparent in the visible light range. Finally, the mechanical properties of SrVO3 are calculated, which can provide some references for future research. Computational method: In this paper, a first-principles method based on density functional theory (DFT) is reported for PBE-GGA analysis using the plane wave-pseudo potential method in a quantum concentrate packet, U value of 7 eV to V-d and a U value of 2 eV to O-p, Grimme correction by DFT-D method. The k points in the Brillouin region are set to 4 × 4 × 4. The energy convergence criterion for self-consistent field calculation is set at 5.0 × 10−6 eV/atom, and the cutoff energy is 1170 eV. In this paper, the force acting on each atom is not more than 0.01 eV/Å, the maximum stress is not more than 0.02GPa, and the maximum atomic displacement is 5 × 10−4 Å. [ABSTRACT FROM AUTHOR]

Context: The effect of X (X = O, Se, N, P, F, Cl) doping on the adsorption of Zn atoms by WS2 was investigated based on first principles. The electronic structure and optical properties of the adsorbed system after atomic doping were calculated. It is found that the Zn atom adsorbed on the W top (Tw) site has the most stable structure. When an S atom is replaced with an X atom based on the adsorption system, where the adsorption energy decreases after doping of O, P, F, and Cl atoms compared to the undoped system, it means that each system is more stable after doping of these atoms; charge transfer shows that the adsorption system after P-atom doping the system around the Zn atom loses electrons while S-atom gains electrons, which indicates that P-atom doping is favorable for the adsorption of Zn by WS2, N, P-atom is introduced as p-type doping and F, Cl-atom is introduced undoped by n-type doping, and the band gap of the doped system is less than that of the undoped one. With the introduction of different dopant atoms, certain impurity energy levels are introduced into the adsorption system. The prohibited bandwidth around the Fermi energy level reduces the density of states, causing the doped system's density of states to shift to lower energies, among which the shifts of N, P, F, and Cl are more pronounced. The P-doped adsorption system shows a new peak near the energy of − 11 eV. In addition, the study of optical properties showed that the peak reflections of both doped and non-doped systems adsorbing Zn atoms appeared in the ultraviolet region; the absorbance coefficient of the doped system is moved in the lower energy direction and red-shifted after atom doping; in addition, the absorption coefficients and reflectance of the P, Se doped systems are enhanced in the wavelength range of 200–300 nm compared with that before doping, the dielectric function and CBM and VBM positions were also calculated further indicating the potential of Se-doped systems in improving photocatalytic efficiency. Methods: In this paper, the structure optimization of X (X = O, Se, N, P, F, Cl) doping on WS2 adsorbed Zn atom model is performed based on the CASTEP module in Materials-Studio software under the first principles using GGA and PBE generalized function. The corresponding binding energies, bond lengths, bond angles, charge densities, energy band structures, densities of states, and optical properties were also analyzed. The Monkhorst–Pack particular K-point sampling method is used in the calculations; the K-point grid is 6 × 6 × 1, and the cutoff energy for the plane wave expansion is 500 eV. After geometric optimization, the iterative accuracy converges to a value of less than 1 × 10−5 eV/atom for the total energy of each atom and less than 0.03 eV/Å for all atomic forces. The thickness of the vacuum layer was set to 20 Å to avoid the effect of interlayer interaction forces. In this paper, 27 atoms were used to form a 3 × 3 × 1 supercellular tungsten disulfide system consisting of 18 S atoms and 9 W atoms. [ABSTRACT FROM AUTHOR]

Context: This research paper investigates the properties and potential applications of antiperovskite materials. Antiperovskites are a class of materials with a unique crystal structure, where the central atom is surrounded by a cage of anions. We review recent research on antiperovskite-based materials for energy storage, photovoltaics, catalysis, and sensors. We discovered that these materials display direct band gap semiconductors, strong absorption in the visible (VIS), ultra-violet (UV), and near infrared regions (NIR) based on their fundamental features, which is the most admirable quality that may be found in many optoelectronic devices. Both mechanical and thermodynamic stability have been confirmed for these materials. We discovered that these materials exhibit high figures of merit through the calculation of transport properties, which makes them a promising candidate for thermoelectric devices. It is anticipated that the proposed material BiPMg3, which has a theoretical efficiency of 11.5%, will make a suitable photovoltaic absorber. This paper highlights the potential of these materials for future technological advancements. Methods: Herein, we have used most authentic techniques to compute fundamental physical properties of these antiperovskites. Full-potential linear augmented plane wave (FP-LAPW) method has been used to investigate electronic, magnetic, optical properties, and make antiperovskites attractive for a variety of applications. In light of its implementation, we have checked the theoretical power conversion efficiency by first principles spectroscopic screening methodology, and inspect the fundamental physical parameters of antiperovskites, focusing on their potential as functional materials for energy and information technologies. [ABSTRACT FROM AUTHOR]

Context: To lessen the impact of the dangerous metal Cr, this paper applies the first principles to investigate the adsorption behavior and photoelectric properties of GaS on Cr. The effects of doped GaS on Cr adsorption behavior are investigated with four GaS systems, which are pure, boron (B)-doped, nitrogen (N)-doped, and oxygen (O)-doped, in order to maximize the characteristics of GaS for use in novel sectors, to obtain understanding of the impact of doping on the electronic structure and optical properties of GaS adsorption of Cr, as well as to promote the development of the material. Four GaS adsorbed Cr systems, pure, B-doped, N-doped, and O-doped, are optimized, and the optimized results show that the stable adsorption position of Cr on both pure and doped GaS is the top position of Ga atoms, whereas doped elements B, N, and O can promote the adsorption of Cr on GaS, and the order of the strength of this promotion is B > N > O. Method: In this paper, molecular simulation calculations and analyses using the CASTEP module in the software Materials Studio are performed to simulate the structure optimization of GaS-adsorbed Cr materials doped with B, N, and O atoms by using the generalized gradient approximation (GGA) plane-wave pseudopotential approach [1] and the Perdew-Burke-Ernzerhof (PBE) generalized function [2]. From the convergence test, it is reasonable to set the K-point network to 4 × 4 × 1 and the truncation energy to 500 eV [3]. In this paper, a 3 × 3 × 1 supercell structure with 18 S atoms and 18 Ga atoms is selected. The convergence value of the iterative accuracy is 1.0e − 5 eV/atom, and all the atomic forces are less than 0.02 eV/Å. A vacuum layer of 16 Å is also set in the C direction to avoid interlayer interactions of GaS. First, we optimize the geometry of the model and then analyze the nature of the adsorption energy and electronic structure corresponding to the model. [ABSTRACT FROM AUTHOR]

Context: This study explores, for the first time, using first principles, the impact of substitutional doping with boron (B), carbon (C), and nitrogen (N) on the adsorption of chromium (Cr) on monolayer MoS2. The effects of doping on the Cr adsorption behavior of MoS2 were investigated using four MoS2 systems, namely, pure, boron (B)-doped, carbon (C)-doped, and nitrogen (N)-doped, in order to gain an in-depth understanding of the mechanism of the effects of doping on the electronic structure and optical properties of Cr adsorbed by MoS2, to optimize the properties of MoS2, to explore new areas of application, and to promote the development of materials science. Four MoS2 adsorption systems of Cr adsorption on pure, B-doped, C-doped, and N-doped MoS2 were optimized, and the optimized results showed that the stable adsorption location of Cr on both pure and doped MoS2 was the hollow location at the top of the folded hexagon. The findings reveal that pure MoS2 has an adsorption effect on Cr, and doped elements B, C, and N can promote the adsorption of Cr on MoS2, and the strong and weak order of this promotion is B > C > N. Methods: In this paper, we use the CASTEP module in the simulation software Materials Studio to perform simulation calculations and analyses to optimize the simulation of Cr adsorption by MoS2 doped with B, C, and N atoms using the generalized gradient approximation (GGA) plane-wave pseudo-potential method (Perdew et al. Phys Rev Lett 77(18):3865–3968, 1996), as well as Perdew-Burke-Ernzerhof (PBE) generalized functionals (Segall et al. J Phys: Condens Matter 14(11):2717–2744, 2022). The convergence test reveals that it is more reasonable to set the K-point network to 3 × 3 × 1 and the truncation energy to 400 eV. In this paper, a 3 × 3 × 1 supercell structure with 18 S atoms and 9 Mo atoms is selected. The convergence value of the iteration accuracy is 1.0e − 5eV/atom, and all the atomic forces are less than 0.02eV/Å. Additionally, to prevent MoS2 interlayer interaction, a vacuum layer with a thickness of 18 Å is set in the C direction. The geometrical optimization of the model is performed first, and then the corresponding adsorption energies of the model and the nature of the electronic structure are analyzed. [ABSTRACT FROM AUTHOR]

Context: This study explores, for the first time, using first principles, the impact of substitutional doping with boron (B), carbon (C), and nitrogen (N) on the adsorption of chromium (Cr) on monolayer MoS2. The effects of doping on the Cr adsorption behavior of MoS2 were investigated using four MoS2 systems, namely, pure, boron (B)-doped, carbon (C)-doped, and nitrogen (N)-doped, in order to gain an in-depth understanding of the mechanism of the effects of doping on the electronic structure and optical properties of Cr adsorbed by MoS2, to optimize the properties of MoS2, to explore new areas of application, and to promote the development of materials science. Four MoS2 adsorption systems of Cr adsorption on pure, B-doped, C-doped, and N-doped MoS2 were optimized, and the optimized results showed that the stable adsorption location of Cr on both pure and doped MoS2 was the hollow location at the top of the folded hexagon. The findings reveal that pure MoS2 has an adsorption effect on Cr, and doped elements B, C, and N can promote the adsorption of Cr on MoS2, and the strong and weak order of this promotion is B > C > N. Methods: In this paper, we use the CASTEP module in the simulation software Materials Studio to perform simulation calculations and analyses to optimize the simulation of Cr adsorption by MoS2 doped with B, C, and N atoms using the generalized gradient approximation (GGA) plane-wave pseudo-potential method (Perdew et al. Phys Rev Lett 77(18):3865–3968, 1996), as well as Perdew-Burke-Ernzerhof (PBE) generalized functionals (Segall et al. J Phys: Condens Matter 14(11):2717–2744, 2022). The convergence test reveals that it is more reasonable to set the K-point network to 3 × 3 × 1 and the truncation energy to 400 eV. In this paper, a 3 × 3 × 1 supercell structure with 18 S atoms and 9 Mo atoms is selected. The convergence value of the iteration accuracy is 1.0e − 5eV/atom, and all the atomic forces are less than 0.02eV/Å. Additionally, to prevent MoS2 interlayer interaction, a vacuum layer with a thickness of 18 Å is set in the C direction. The geometrical optimization of the model is performed first, and then the corresponding adsorption energies of the model and the nature of the electronic structure are analyzed. [ABSTRACT FROM AUTHOR]

Context: 1,3,5-triamino-2,4,6-trinitrobenzene (TATB) is a typical insensitive energetic material. It can be used in explosive formulations, such as PBX-9502 and LX-17-0. TATB is an intriguing and unusual explosive for another reason: it crystallizes into a wide array of planar hydrogen bonds, forming a graphite-like layered structure. Therefore, TATB is one of the important research objects, and its surface structure needs to be deeply understood. In this research work, the electronic and energetic properties of TATB (001) surface are explored. Methods: In this paper, the structural, electronic, energetic properties and impact sensitivity of TATB (001) surface structure at 0 and −3 GPa along with x-axis were calculated in this study using the first-principles calculations. The calculations in this paper are performed in the CASTEP code, which is based on the density functional theory with the first-principles calculation method using the plan-wave pseudopotential approach. The exchange-correlation interaction was adopted by the generalized gradient approximation (GGA) with the Perdew-Burke-Ernzerhof (PBE) functional. The DFT-D method with the Grimme correction accurately models van der Waals interactions. To model the surface structures of TATB, the planar slab method was employed. We constructed TATB (001) periodic slabs including three layers with a 15-Å vacuum layer. [ABSTRACT FROM AUTHOR]

Context: The Adenine-based nanotube is theoretically designed, and its transmission spectra are investigated. The quantum-confined Adenine nanotube shows electronic transmission of the carrier at minimum stress. In this paper, the prediction of transmission spectra of the quantum-confined bio-molecular nanotube is investigated and deeply studied. Molecular level structure prediction and their electronic characterization can be possible with ab initio accuracy using a machine learning algorithmic approach. At the molecular level, it is difficult to predict quantum transmission spectra as these results are always hampered by the carrier backscattering effect. However, mostly these predictive models are available for intrinsic semi-conducting materials and other inorganic structures. Methods: Machine learning algorithms are designed to predict the electronic properties of the nano-scale structure. This task is even more difficult when quantum-confined molecular arrangements are considered, whose transmission spectra are sensitive to the confinements applied. This paper presents an effective machine learning algorithms framework for predicting transmission spectra of quantum-confined nanotubes from their geometries. In this paper, we consider regression machine learning algorithms to find maximum accuracy with varying configurations and geometries to excerpt their atoms' local environment information. The Hamiltonian components are then used to enable the utilization of the information to predict the electronic structure at any arbitrary sampling point or k-point. The theoretical basics introduced in this process help to capture and incorporate minor changes in quantum confinements into transmission spectra and provide the framework algorithm with more accuracy. This paper shows the ability to predict the accurate algorithmic models of the Adenine nanotube. In this framework, we have considered a tiny data set to achieve a rapid and reliable method for electronic structure determination and also propose the best algorithm for predictive model analysis. [ABSTRACT FROM AUTHOR]

Context: In this paper, the electronic and optical properties of Cr-doped monolayer MoS2 under uniaxial tensile strain are investigated by first-principle calculations. It is shown that uniaxial tensile strain can significantly change the electronic and optical properties of Cr-doped monolayer MoS2, and the bandgap value of the intrinsic MoS2 system gradually decreases with the increase of tensile strain, while the bandgap value of the Cr-doped MoS2 system is relatively stable. However, when the stretching reaches a certain degree, both the intrinsic and doped systems become metallic. From the analysis of the density of states, it is found that new electronic states and energy levels appear in the intrinsic MoS2 system and all Cr-doped monolayer MoS2 systems with the increase of the tensile strain, but the changes in the density of states diagrams of the Cr-doped monolayer MoS2 system are relatively small, which is mainly attributed to the effect of the Cr-doped atoms. The analysis of optical properties displays that the stretched doped system differs from the intrinsic MoS2 system in terms of dielectric function, absorption and reflection, energy loss function, and refractive index. Our results suggest that uniaxial tensile strain can be used as an effective means to modulate the electronic structure and optical properties of Cr-doped monolayer MoS2. These findings provide a theoretical basis for understanding the optoelectronic properties of MoS2 and its doped systems as well as their applications in optoelectronic devices. Methods: Based on the first principle of density functional theory framework and the CASTEP module in Materials Studio software (Perdew et al. in Phys Rev Lett 77(18):3865–3868, 1996). The structure of Cr atom-doped MoS2 systems and MoS2 systems were optimized using the generalized gradient approximation plane-wave pseudopotential method (GGA) and Perdew-Burke-Ernzerhof (PBE) generalized functions under 3%, 6%, and 9% tensile deformation, and the corresponding formation energy, bond length, electronic structure, and optical properties of the models were analyzed. The Grimme (J Comput Chem 27(15):1787–1799, 2006) vdW correction with 400 eV cutoff was used in Perdew-Burke-Ernzerhof (PBE) functional to optimize the geometry until the forces and energy converged to 0.02 eV/Å and 1.0e-5eV/atom, respectively. For each model structure optimization, the K-point grid was assumed to be 4×4×1, using the Monkhorst-Pack special K-point sampling method. After the MoS2 supercell convergence test, the plane-wave truncation energy was chosen to be 400 eV. Following geometric optimization, the iterative accuracy converged to no less than 1.0×10−5 eV/atom for total atomic energy and less than 0.02 eV/Å for all atomic forces. We created a vacuum layer of 18 Å along the Z-axis to prevent the impact of periodic boundary conditions and weak van der Waals forces between layers on the monolayer MoS2. In this paper, a total of 27 atoms were used for the 3×3×1 supercell MoS2 system, which consists of 18 S atoms and 9 Mo atoms. [ABSTRACT FROM AUTHOR]

Context: In this paper, the electronic and optical properties of Cr-doped monolayer MoS2 under uniaxial tensile strain are investigated by first-principle calculations. It is shown that uniaxial tensile strain can significantly change the electronic and optical properties of Cr-doped monolayer MoS2, and the bandgap value of the intrinsic MoS2 system gradually decreases with the increase of tensile strain, while the bandgap value of the Cr-doped MoS2 system is relatively stable. However, when the stretching reaches a certain degree, both the intrinsic and doped systems become metallic. From the analysis of the density of states, it is found that new electronic states and energy levels appear in the intrinsic MoS2 system and all Cr-doped monolayer MoS2 systems with the increase of the tensile strain, but the changes in the density of states diagrams of the Cr-doped monolayer MoS2 system are relatively small, which is mainly attributed to the effect of the Cr-doped atoms. The analysis of optical properties displays that the stretched doped system differs from the intrinsic MoS2 system in terms of dielectric function, absorption and reflection, energy loss function, and refractive index. Our results suggest that uniaxial tensile strain can be used as an effective means to modulate the electronic structure and optical properties of Cr-doped monolayer MoS2. These findings provide a theoretical basis for understanding the optoelectronic properties of MoS2 and its doped systems as well as their applications in optoelectronic devices. Methods: Based on the first principle of density functional theory framework and the CASTEP module in Materials Studio software (Perdew et al. in Phys Rev Lett 77(18):3865–3868, 1996). The structure of Cr atom-doped MoS2 systems and MoS2 systems were optimized using the generalized gradient approximation plane-wave pseudopotential method (GGA) and Perdew-Burke-Ernzerhof (PBE) generalized functions under 3%, 6%, and 9% tensile deformation, and the corresponding formation energy, bond length, electronic structure, and optical properties of the models were analyzed. The Grimme (J Comput Chem 27(15):1787–1799, 2006) vdW correction with 400 eV cutoff was used in Perdew-Burke-Ernzerhof (PBE) functional to optimize the geometry until the forces and energy converged to 0.02 eV/Å and 1.0e-5eV/atom, respectively. For each model structure optimization, the K-point grid was assumed to be 4×4×1, using the Monkhorst-Pack special K-point sampling method. After the MoS2 supercell convergence test, the plane-wave truncation energy was chosen to be 400 eV. Following geometric optimization, the iterative accuracy converged to no less than 1.0×10−5 eV/atom for total atomic energy and less than 0.02 eV/Å for all atomic forces. We created a vacuum layer of 18 Å along the Z-axis to prevent the impact of periodic boundary conditions and weak van der Waals forces between layers on the monolayer MoS2. In this paper, a total of 27 atoms were used for the 3×3×1 supercell MoS2 system, which consists of 18 S atoms and 9 Mo atoms. [ABSTRACT FROM AUTHOR]

Context: This study explores the impact of deformation on the electrical and optical characteristics of monolayer cadmium telluride (MoTe2) with vacancies, using the foundational principles of density functional theory. It was discovered that both strain and imperfections alter the electrical characteristics of monolayer MoTe2. Under VTe-MoTe2, a direct-to-indirect band-gap transition occurs. In DTe-MoTe2, the band-gap value reduces dramatically, the conduction band changes downward, and the carrier concentration rises. The DVTe-induced band gap state is closer to the Fermi energy level than the VTe-induced band gap state. In this paper, DTe-MoTe2 is chosen for tensile deformation. The results show that the band-gap value tends to decrease by increasing tensile deformation. When the stretching value reaches 10%, the lower bound of the conduction band and the top of the valence band overlap, and the system is converted from a semiconductor to a metal. Considering the density of states, the missing state MoTe2 is mainly contributed by the participation of Te-s, Te-p, and Mo-d orbitals. In terms of optical qualities, the absorption and reflection peaks are red-shifted and blue-shifted, respectively. It is hoped that these effects on the optoelectronic properties will be widely applied. Methods: In this study, we utilize the generalized gradient approximation plane-wave pseudopotential method, incorporating Perdew-Burke Ernzerhof (PBE) generalized functions and following the fundamental principles of the density functional theory framework. A 3 × 3 × 1 supercell was constructed as an undoped model based on a MoTe2 monolayer, which consists of 9 Mo atoms and 18 Te atoms. The vacuum flat plate was set to 15 Å along the z-direction to avoid interactions between the monolayers. For electronic structure calculations, the energy cutoff was set to 450 eV. Each model's computational process and structural optimization were carried out using the Monkhorst–Pack specialized K-point sampling approach. Crystal optimization computations used a 3 × 3 × 1 Monkhorst–Pack K-point grid for molybdenum ditelluride monolayers and a 9 × 9 × 1 K-point grid for electronic system analysis, analyzing state density and optical characteristics, respectively. For the structural optimization, the convergence requirements for maximum force, maximum atom displacement, maximum stress, and energy change were defined at 0.03 eV/Å, 0.001 Å, 0.05 Gpa, and 1.0 × 10−5 eV/atom, respectively. [ABSTRACT FROM AUTHOR]

Context: The electronic properties and optical properties of Cr-doped monolayer WS2 under uniaxial compressive deformation have been investigated based on density functional theory. In terms of electronic structure properties, both intrinsic and doped system bandgaps decrease with the increase of compression deformation, and the values of the bandgap under the same compression deformation after Cr doping are reduced compared with the corresponding intrinsic states. When the compressive deformation reaches 10%, both the intrinsic and doped system band gaps are close to zero. New electronic states and impurity energy levels appear in the WS2 system when doped with Cr atoms. For the optical properties, the calculation and analysis of the dielectric function under each deformation regime of monolayer WS2 show that the compression deformation affects the dielectric function, and when the compression deformation is 10%, the un-doped and Cr-doped regimes show a decrease in ε1(ω) compared to the compression deformation of 8%. For each deformation system, the peak reflections occur in the ultraviolet region. Near the position where the second peak of the absorption spectrum appears, it can be seen that the ability of each system to absorb light gradually decreases with the increase of the amount of deformation and appears to be red-shifted to varying degrees. Methods: This study follows the initial principles of the density functional theory framework and is based on the CASTEP module of Materials-Studio software GGA and PBE generalizations are used to perform computations such as geometry optimization of the model. We have calculated the energy band structure of monolayer WS2 with intrinsic and compressive deformations of 2% and 4% using PBE and HSE06, respectively. The band gap values calculated using PBE are 1.802 eV, 1.663 eV, and 1.353 eV, respectively, and the band gap values calculated with HSE06 are 2.267 eV, 2.034 eV, 1.751 eV. The results show that the bandgap values calculated by HSE06 are significantly higher than those calculated by PBE, but the bandgap variations calculated by the two methods have the same trend, and the shape characteristics of the energy band structure are also the same. However, it is worth noting that the computation time required for the HSE06 calculation is much longer than that of the PBE, which is far beyond the capability of our computer hardware, and the purpose of this paper is to investigate the change rule of the effect of deformation on the bandgap value, so to save the computational resources, the next calculations are all calculated using the PBE. The Monkhorst–Pack special K-point sampling method is used in the calculations. The cutoff energy for the plane wave expansion is 400 eV, and the K-point grid is assumed to be 5 × 5 × 1. Following geometric optimization, the iterative precision converges to a value of less than 0.03 eV/Å for all atomic forces and at least 1 × 10−5 eV/atom for the total energy of each atom. The vacuum layer's thickness was selected at 20 Å to mitigate the impact of the interlayer contact force. [ABSTRACT FROM AUTHOR]

Context: The electronic properties and optical properties of Cr-doped monolayer WS2 under uniaxial compressive deformation have been investigated based on density functional theory. In terms of electronic structure properties, both intrinsic and doped system bandgaps decrease with the increase of compression deformation, and the values of the bandgap under the same compression deformation after Cr doping are reduced compared with the corresponding intrinsic states. When the compressive deformation reaches 10%, both the intrinsic and doped system band gaps are close to zero. New electronic states and impurity energy levels appear in the WS2 system when doped with Cr atoms. For the optical properties, the calculation and analysis of the dielectric function under each deformation regime of monolayer WS2 show that the compression deformation affects the dielectric function, and when the compression deformation is 10%, the un-doped and Cr-doped regimes show a decrease in ε1(ω) compared to the compression deformation of 8%. For each deformation system, the peak reflections occur in the ultraviolet region. Near the position where the second peak of the absorption spectrum appears, it can be seen that the ability of each system to absorb light gradually decreases with the increase of the amount of deformation and appears to be red-shifted to varying degrees. Methods: This study follows the initial principles of the density functional theory framework and is based on the CASTEP module of Materials-Studio software GGA and PBE generalizations are used to perform computations such as geometry optimization of the model. We have calculated the energy band structure of monolayer WS2 with intrinsic and compressive deformations of 2% and 4% using PBE and HSE06, respectively. The band gap values calculated using PBE are 1.802 eV, 1.663 eV, and 1.353 eV, respectively, and the band gap values calculated with HSE06 are 2.267 eV, 2.034 eV, 1.751 eV. The results show that the bandgap values calculated by HSE06 are significantly higher than those calculated by PBE, but the bandgap variations calculated by the two methods have the same trend, and the shape characteristics of the energy band structure are also the same. However, it is worth noting that the computation time required for the HSE06 calculation is much longer than that of the PBE, which is far beyond the capability of our computer hardware, and the purpose of this paper is to investigate the change rule of the effect of deformation on the bandgap value, so to save the computational resources, the next calculations are all calculated using the PBE. The Monkhorst–Pack special K-point sampling method is used in the calculations. The cutoff energy for the plane wave expansion is 400 eV, and the K-point grid is assumed to be 5 × 5 × 1. Following geometric optimization, the iterative precision converges to a value of less than 0.03 eV/Å for all atomic forces and at least 1 × 10−5 eV/atom for the total energy of each atom. The vacuum layer's thickness was selected at 20 Å to mitigate the impact of the interlayer contact force. [ABSTRACT FROM AUTHOR]

Context: This paper presents the results of the study of the electronic structure and cationic and excited states of three spiroborate complexes (2-acetylacetonato-1,3,2-benzodioxaborol, its NH- and NMe-derivatives) and three corresponding ligands (acetylacetone, 4-aminopent-3-en-2-one, and 4-methylaminopent-3-en-2-one). Materials based on spiroborates are used in medicine, for example, as a drug carrier. In industry, spiroborate anions are used in ionic liquids and as alternative high performance lubricants. Analysis of experimental and calculated data allowed determining the influence of functional groups on the parameters of the electronic structure and energy of electronic transitions. Compared to acetylacetone and its NH- and NMe-derivatives, the upper filled molecular orbitals of the corresponding spiroborates are stabilized at 0.4–1.7 eV, which is due to the positive charge of the ligand due to the acceptor properties of the dioxyphenylene fragment. Among the studied compounds, when replacing the oxygen atom in the α-position with the NH- or NMe-group, a bathochromic shift of intense bands in the absorption spectra is observed, since the energy intervals between the orbitals of the π3 and π4 ligand are reduced. In addition, in a number of spiroborates, the violation of C2v symmetry when replacing an oxygen atom leads to the appearance of a low-intensity maximum in the long-wave part of the absorption spectrum, due to the π2X → π4 transition. Method: Complexes were studied by photoelectron spectroscopy, absorption spectroscopy, and high-level ab initio quantum chemical computations, including the algebraic diagrammatic construction method for the polarization propagator of the second order (ADC(2)), the outer-valence Green's function (OVGF), the density functional theory (DFT), the time-dependent density functional theory (TDDFT) and the domain-based local pair natural orbital (EOM-DLPNO) methods. X-ray photoelectronic spectra of two spiroborates in the condensed state were measured using a two-chamber high-vacuum system MXPS XP (Omicron, Germany). UV–visible absorption spectra were recorded using a spectrophotometer 2550 (Shimadzu-UV, Japan). The geometry of all studied compounds was optimized by the DFT/B3LYP/Def2-SVP method. The energy of electron levels in the S0 state and the distribution of electron density at each MO were obtained by the DFT/CAMB3LYP/cc-pVDZ method. The energies of excited states were obtained by the TDDFT/CAMB3LYP/cc-pVDZ, ADC(2)/cc-pVDZ and EOM-DLPNO/cc-pVDZ methods. All DFT and TDDFT calculations were carried out in the GAMESS (US) software computing package. ADC(2) calculations of excited states were performed using the Orca 4.0.1 software package. EOM-DLPNO and OVGF calculations were carried out in the Gaussian 16 software package. [ABSTRACT FROM AUTHOR]

Based on first-principles calculations using density functional theory, this paper systematically studies the effects of uniaxial tension-compression deformation on the stability and electrical and thermal properties of monolayer graphene and AA stacked bilayer graphene. The study shows that the original symmetry of graphene is broken by the tensile and compression deformations, catalyzing the interlayer coupling of bilayer graphene. Its electronic energy band, phonon dispersion, and other physical properties have changed. The transition from metalloid to semiconductor has completed since the deformation weakens the stability of the graphene system to varying degrees and opens the band gap of monolayer graphene. The band gap becomes larger with the increase of tensile and compressive deformation, in which way it can be adjusted. Influenced by the tiny tensile deformation, metalloid properties are exhibited by a small band gap of intrinsic AA-stacked bilayer graphene, and then the band gap becomes larger as the deformation increases. A band gap appears in the system phonon dispersion curves when the compression deformation increases to −15%. The phonon mode softens and shows virtual frequency. The value of virtual frequency increases with the increase of compression deformation. At the very moment, the vibration mode is discontinuous, and the system is unstable. [ABSTRACT FROM AUTHOR]

Purposes: The paper aims to investigative the cacuses and impacts of In- and Vacancy-doped to 6H-SiC, expecting that improving optical properties of materials. Design-Using the first-principles calculations, we discuss the electronic structure and optical properties of different doped 6H-SiC systems. Findings: The results show that In-doped 6H-SiC becomes a direct bandgap p-type semiconductor and the energy bandgap is reduced from the intrinsic 2.059 to 1.515 eV. We demonstrate the stability of the systems through the formation energy analysis, meanwhile identify their physical origins and discuss applications of all structures in electronic devices within optical analysis. Find the energy beginning values of the VSi-doped and VC-doped systems' optical absorption spectrums and extend to 0.4 2 eV and 0.11 eV respectively compared with the original 3.23 eV. In the visible light region, the reflectivity images of the VC/VSi and (In, VSi)-codoped systems rise obviously. Conclusions: The optical properties of all doping systems were analyzed to be improved compared with the intrinsic, all above mentioned provide a theoretical basis for the fabrication of spintronic and optical devices. [ABSTRACT FROM AUTHOR]

Context: In this paper, the structural stability, electronic structure, and optical properties of monolayer MoSe2 doped with C, O, Si, S, and Te atoms, respectively, under defective conditions are investigated based on first principles. It is found that the system is more structurally stable when defecting a single Se atom as compared to defecting a single Mo or two Se atoms. The electronic structure analysis of the system reveals that intrinsic MoSe2 is a direct bandgap semiconductor. The bandgap value of the system decreases with a single Se atom defect and introduces two new impurity energy levels in the conduction band. The defective systems doped with C and Si atoms all exhibit P-type doping. The total density of states of intrinsic MoSe2 is mainly contributed by the Mo-d and Se-p orbitals, and new density of state peaks appears near the conduction band after the defects of Se atoms. The total density of states of the defective system doped by each atom is mainly contributed by Mo-d, Se-p, and the result of the p orbital contribution of each dopant atom. By analyzing the dielectric function of each system, it is found that the intrinsic MoSe2 has the lowest static permittivity and the C-doped defect system has the highest static permittivity, which reaches 21.42. The C- and Si-doped defect systems are the first to start absorbing the light, and the intrinsic MoSe2 absorbs the light later, with its absorption edge starting at 1.25 eV. In the visible range, the reflection peaks of the systems move toward the high-energy region and the blue-shift phenomenon occurs. It is hoped that applying modification means to modulate the physical properties of the two-dimensional materials will provide some theoretical basis for broadening the application of monolayer MoSe2 in the field of optoelectronic devices. Methods: This study utilizes the first principle computational software package MS8.0 (Materials studio8.0) under density functional theory (DFT). The exchange–correlation potential (GGA-PBE) is described by the Perdew-Burke-Ernzerhof correlation function in CASTEP, and the potential function adopts the ultrasoft pseudopotential in the inverse space formulation. The plane wave truncation energy Ecut is set to 400 eV, the K-point is taken as 5 × 5 × 1, and the force convergence criterion is 0.05 eV/Å. The convergence accuracy of the total energy of the system is less than 1.0 × 10−5 eV/atom, the tolerance shift is less than 0.002 Å, and the stress deviation is less than 0.1 GPa. The vacuum layer is taken as 15 Å, which is intended to minimize the interlayer force. The vacuum layer was set to 15 Å to avoid the effect of layer-to-layer interaction forces in the crystal cell. [ABSTRACT FROM AUTHOR]

Context: In this paper, the structural stability, electronic structure, and optical properties of monolayer MoSe2 doped with C, O, Si, S, and Te atoms, respectively, under defective conditions are investigated based on first principles. It is found that the system is more structurally stable when defecting a single Se atom as compared to defecting a single Mo or two Se atoms. The electronic structure analysis of the system reveals that intrinsic MoSe2 is a direct bandgap semiconductor. The bandgap value of the system decreases with a single Se atom defect and introduces two new impurity energy levels in the conduction band. The defective systems doped with C and Si atoms all exhibit P-type doping. The total density of states of intrinsic MoSe2 is mainly contributed by the Mo-d and Se-p orbitals, and new density of state peaks appears near the conduction band after the defects of Se atoms. The total density of states of the defective system doped by each atom is mainly contributed by Mo-d, Se-p, and the result of the p orbital contribution of each dopant atom. By analyzing the dielectric function of each system, it is found that the intrinsic MoSe2 has the lowest static permittivity and the C-doped defect system has the highest static permittivity, which reaches 21.42. The C- and Si-doped defect systems are the first to start absorbing the light, and the intrinsic MoSe2 absorbs the light later, with its absorption edge starting at 1.25 eV. In the visible range, the reflection peaks of the systems move toward the high-energy region and the blue-shift phenomenon occurs. It is hoped that applying modification means to modulate the physical properties of the two-dimensional materials will provide some theoretical basis for broadening the application of monolayer MoSe2 in the field of optoelectronic devices. Methods: This study utilizes the first principle computational software package MS8.0 (Materials studio8.0) under density functional theory (DFT). The exchange–correlation potential (GGA-PBE) is described by the Perdew-Burke-Ernzerhof correlation function in CASTEP, and the potential function adopts the ultrasoft pseudopotential in the inverse space formulation. The plane wave truncation energy Ecut is set to 400 eV, the K-point is taken as 5 × 5 × 1, and the force convergence criterion is 0.05 eV/Å. The convergence accuracy of the total energy of the system is less than 1.0 × 10−5 eV/atom, the tolerance shift is less than 0.002 Å, and the stress deviation is less than 0.1 GPa. The vacuum layer is taken as 15 Å, which is intended to minimize the interlayer force. The vacuum layer was set to 15 Å to avoid the effect of layer-to-layer interaction forces in the crystal cell. [ABSTRACT FROM AUTHOR]

In this paper, the effect of substitutional doping of boron (B), carbon (C), nitrogen (N), oxygen (O), and phosphorus (P) at the S-site on the electronic structure of the monolayer TiS2 system is investigated using a first-principles calculation method. The effect of nonmetal doping on the band gap of TiS2 and its mechanism were studied by analyzing the stability, electronic structure, and charge transfer of the system. By calculating the electron cloud overlap population and formation energy, we confirmed that the system is stable, and the Ti–X bond length of the doped system undergoes different degrees of distortion. The properties of the B, C, and N doped system show different properties with different doping concentrations; the band gap of the O-atom system gradually expands with the rise of the doping rate. The hybridization positions of the impurity and the intrinsic atoms are found by comparing the DOS; combined with the charge density difference, we confirmed the interaction of impurity atoms with the system and revealed the bonding process of different systems. [ABSTRACT FROM AUTHOR]

Context: Ni-rich layered oxides have been widely studied as cathodes because of their high energy density. However, the gradual structural transformation during the cycle will lead to the capacity degradation and potential decay of the cathode materials. In this paper, first-principle calculations were used to investigate the formation energy, and geometric and electronic structure of Mg-doped LiNiO2 cathode for Li-ion batteries. The results show that Mg doping has little effect on the geometric structure of LiNiO2 but has great effect on its electronic structure. Our data give an insight into the microscopic mechanism of Mg-doped LiNiO2 and provide a theoretical reference for experimental research, which is helpful to the design of safer and higher energy density Ni-rich cathodes. Method: In this work, all calculations were performed by the VASP package; the PBE functional in the generalized gradient approximation (GGA) was employed to describe the exchange–correlation interactions. An energy cutoff of 520 eV and a 5 × 5 × 3 Monkhorst–Pack mesh of k-point sampling in the Brillouin zone were chosen for all calculations. All atoms were relaxed until the convergences of 10−5 eV/f.u in energy and 0.01 eV/Å in force were reached. [ABSTRACT FROM AUTHOR]

Context: In this study, the effects of different shear deformations on the structural stability, electronic structure, and optical properties of a Mg atom adsorption system of S vacancy defect SnS2 are systematically investigated based on density functional theory. It is shown that the presence of an S-vacancy defect makes the band gap of the SnS2 system significantly smaller than that of the perfect SnS2 system, and the SnS2 system is changed from a direct band gap semiconductor to an indirect band gap semiconductor. The optimal adsorption position of a Mg atom on the S-vacancy SnS2 system is above the S atom where the adsorption energy is the largest and the system is the most stable. The density of states of the adsorption system is predominantly contributed by the S-3p and Sn-5 s orbital electrons. The imposition of shear deformation leads to the introduction of certain impurity energy levels in the adsorption system, and the forbidden bandwidth near the Fermi energy level decreases. As compared to the intrinsic SnS2, the absorption and reflection peaks of adsorption systems under different shear deformation are red-shifted and appear in the ultraviolet region. This improves the utilization of the adsorption system for ultraviolet light to a great extent. Methods: The model calculations in this paper are performed using the CASTEP module of the Material Studio (MS) software based on the first principles of Density Functional Theory (DFT) (Wei et al. in Physica B 545:99–106, 2018) for plane wave artifacts. Geometrical optimization and computational procedures are used to calculate the exchange–correlation energy using the Perdew-Burke-Ernzerhof (PBE) generalized function (Perdew et al. in Phys Rev B Condens Matter 48:4978, 1993) of the generalized gradient approximation (GGA). The Monkhorst–Pack method (Monkhorst and Pack in Phys Rev B 13:5188–5192, 1976) was used to rationalize the sampling of the highly symmetric k-points in the Brillouin zone. The grid of k-points is set to be 6 × 6 × 1. The plane-wave truncation energy is set to be 400 eV. The energy convergence criterion is 1.0 × 10−5 eV. The residual stress of all atoms is 0.01 eV/Å. A vacuum layer with a thickness of 15 Å is set up in the z-direction, which ensures that the interactions of the system along the z-axis between the top and the bottom layers can be ignored during the whole simulation process. We construct a 3 × 3 × 1 SnS2 system containing 27 atoms as the computational model. The intrinsic SnS2 contains 9 Sn atoms and 18 S atoms. [ABSTRACT FROM AUTHOR]

Context: In this study, the effects of different shear deformations on the structural stability, electronic structure, and optical properties of a Mg atom adsorption system of S vacancy defect SnS2 are systematically investigated based on density functional theory. It is shown that the presence of an S-vacancy defect makes the band gap of the SnS2 system significantly smaller than that of the perfect SnS2 system, and the SnS2 system is changed from a direct band gap semiconductor to an indirect band gap semiconductor. The optimal adsorption position of a Mg atom on the S-vacancy SnS2 system is above the S atom where the adsorption energy is the largest and the system is the most stable. The density of states of the adsorption system is predominantly contributed by the S-3p and Sn-5 s orbital electrons. The imposition of shear deformation leads to the introduction of certain impurity energy levels in the adsorption system, and the forbidden bandwidth near the Fermi energy level decreases. As compared to the intrinsic SnS2, the absorption and reflection peaks of adsorption systems under different shear deformation are red-shifted and appear in the ultraviolet region. This improves the utilization of the adsorption system for ultraviolet light to a great extent. Methods: The model calculations in this paper are performed using the CASTEP module of the Material Studio (MS) software based on the first principles of Density Functional Theory (DFT) (Wei et al. in Physica B 545:99–106, 2018) for plane wave artifacts. Geometrical optimization and computational procedures are used to calculate the exchange–correlation energy using the Perdew-Burke-Ernzerhof (PBE) generalized function (Perdew et al. in Phys Rev B Condens Matter 48:4978, 1993) of the generalized gradient approximation (GGA). The Monkhorst–Pack method (Monkhorst and Pack in Phys Rev B 13:5188–5192, 1976) was used to rationalize the sampling of the highly symmetric k-points in the Brillouin zone. The grid of k-points is set to be 6 × 6 × 1. The plane-wave truncation energy is set to be 400 eV. The energy convergence criterion is 1.0 × 10−5 eV. The residual stress of all atoms is 0.01 eV/Å. A vacuum layer with a thickness of 15 Å is set up in the z-direction, which ensures that the interactions of the system along the z-axis between the top and the bottom layers can be ignored during the whole simulation process. We construct a 3 × 3 × 1 SnS2 system containing 27 atoms as the computational model. The intrinsic SnS2 contains 9 Sn atoms and 18 S atoms. [ABSTRACT FROM AUTHOR]

In this paper, the effect of pressure on the structural stability, elasticity, thermodynamics, and associated electronic structure of L12-type Ni3X (X = Al, Ti, V, Nb) phases is investigated using a first-principles approach. It is shown that pressure leads to volume compression of the Ni3X phase and reduction of the lattice parameters. The increase of pressure promotes the increase of elastic constants, bulk modulus, shear modulus, and Young's modulus. And there is an extremely strong linear correlation between the pressure and the elastic constants. The calculated elastic constants indicate that the pressure leads to strong mechanical stability and ductility of the Ni3X phase. Mechanical anisotropy of the Ni3X phase also increases with increasing pressure. The electronic analysis shows that the increase in pressure leads to enhanced Ni-d-orbitals and X-d-orbitals hybridization and increased electron transfer. The order in terms of electron accumulation intensity is Ni3Ti > Ni3Nb > Ni3V > Ni3Al. It is more directly reflected in the charge density difference diagram. This is in agreement with the results of the enthalpy of formation (ΔH) and Debye temperature (ΘD) analysis. [ABSTRACT FROM AUTHOR]

First principles were used to investigate electronic properties of Au-doped graphene, Ag-doped graphene, and Cu-doped graphene and the effect of adsorption behavior of hydrogen sulfide (H2S) molecule on their electronic properties. Doped graphene exhibits interesting electronic properties. The gap value of Ag-doped graphene is 0.29 eV, whereas Au-doped graphene is 0.48 eV which is the largest one in three doped systems, a clear difference of structure and electronic properties among three doped systems absorbing H2S molecule. The doped atom and the H2S molecule are on the same side of the graphene for Au-doped graphene and Cu-doped graphene, which belong to a kind of bonding orbital hybridization of electron cloud showed from charge difference density plots. However, Ag-doped graphene adsorbed with H2S molecule exhibits a kind of antibonding orbital hybridization. With the analysis in this paper, it is beneficial to research H2S gas sensors. [ABSTRACT FROM AUTHOR]

Tirapazamine (TP) has been shown to enhance the cytotoxic effects of ionizing radiation in hypoxic cells, thus making it a candidate for a radiosensitizer. This selective behavior is often directly linked to the abundance of O2. In this paper, we study the electronic properties of TP in vacuum, micro-hydrated from one up to three molecules of water and embedded in a continuum of water. We discuss electron affinities, charge distribution, and bond dissociation energies of TP, and find that these properties do not change significantly upon hydration. In agreement with its large electron affinity, and bond breaking triggered by electron attachment requires energies higher than 2.5 eV, ruling out the direct formation of bioactive TP radicals. Our results suggest, therefore, that the selective behavior of TP cannot be explained by a one-electron reduction from a neighboring O2 molecule. Alternatively, we propose that TP's hypoxic selectivity could be a consequence of O2 scavenging hydrogen radicals. [ABSTRACT FROM AUTHOR]

Great progress has been made in O2 adsorption on gold clusters. However, systematic investigations of O2 adsorption on Au 16 − clusters have not been reported. Here, we present a systematic study of the structural, electronic, and adsorptive properties of Au 16 O 2 – clusters by density functional theory (DFT) calculations coupled with stochastic kicking method. Global minimum searches for Au 16 O 2 – reveal that exohedral derivatives are more favored. Furthermore, the obtained ground-state structure exhibits significant stability, as judged by its larger adsorption energy (1.16 eV) and a larger HOMO-LUMO gap (0.57 eV). The simulated photoelectron spectra (PES) of Au 16 O 2 – isomers will be instructive to identify the structures in future experiments. There are three interesting discoveries in the present paper: (1) O2 undergoes chemical adsorption onto the parent Au 16 − clusters, but the amount of the adsorption energy is related to the parent Au 16 − clusters; (2) the process that O2 undergoes dissociative adsorption onto the parent Au 16 − clusters is exothermic; (3) Au 16 O 2 – isomers show smaller X-A energy gaps than those of parent Au 16 − clusters, reflecting that their geometric and electronic structures are distorted remarkably due to dissociative adsorption of O2. [ABSTRACT FROM AUTHOR]

Context: Three novel organic semiconductors (Fig. 1), which are molecule (a) and molecule (c) have the same wing unit molecules (b) and (c) have the same core unit were reported. Thus, the influence of wing units on solar cell device performance parameters such us the opto-electronics properties, non-linear optics (NLO), electronic properties, and natural bond orbitals (NBO) were calculated in order to evincing molecular structure–property relations. The all studied molecules would be promising materials for photovoltaic applications, but molecule (c) could be an excellent candidate for high efficiency organic solar cells with a small energy gap, a lowest ΔGreg, highest Voc, and LHE values. According to all these results, it is seen that the wing units of the molecules affect both the opto-electronic properties and NLO properties more than the core units. These theoretical calculations is expected to obtain new strategies to synthesize efficient materials for organic solar cell devices. Method: Density functional (DFT) and time-dependent density functional (TDDFT) theory simulations for the solar cell device performance parameters, non-linear optics, and natural bond analysis were performed using the Gaussian 09w software. The ground state properties of molecules have been studied with hybrid functional of Beckethree–Lee–Yang–Parr (B3LYP), and excited state properties have been calculated CAMB3LYP and our DFT calculations were performed using 6-31++G(d,p) basis set on fully optimized geometries. [ABSTRACT FROM AUTHOR]

Context: The article explores and compares the electronic structure and magnetic properties of transition metal phosphate materials, namely FePS3, CoPS3, and NiPS3. Research findings: Analysis of the optimized configuration reveals significant insights into the electronic properties of MnPS3 clusters. Electrons within the cluster exhibit a flow from the metal atom M and the non-metal atom P to the non-metal atom S. The S atom serves as the primary site for electrophilic reactions within the cluster, while the metal atom hosts the main site for nucleophilic reactions. Configurations 2a(2), 2b(2), 3a(4), 3b(3), and 3c(2) exhibit enhanced electron mobility and optimal electronic properties. Moreover, the analysis of the magnetic properties of the optimized configurations demonstrates that the magnetic behavior of MnPS3 clusters is influenced by the spin motion of α electrons in the p orbital. Metal atoms make a relatively significant contribution to the magnetic properties of MnPS3 clusters. Configurations 1b(3), 2c(4), and 3a(4) exhibit comparatively higher magnetic properties compared to other configurations of the same size. This study identifies the optimal configuration for the magnetic and electronic properties of transition metal phosphorothioate materials. It also elucidates the trends in magnetic and electronic properties as the number of metal atoms varies, thereby providing valuable theoretical support for the application of these materials in the fields of magnetic materials and electronic devices. Methods: In this study, the Fe-based transition elements, namely Fe, Co, and Ni, are selected as the metal atoms M. The cluster MPS3 is used to simulate the local structure of the material, allowing for an investigation into the influence of the metal atoms on its electronic and magnetic properties. By increasing the number of metal atoms and expanding the cluster size, the variations in these properties are explored. Density functional theory (DFT) calculations are performed using the B3LYP functional within the Gaussian09 software package. The MnPS3 cluster is subjected to optimal calculations and vibrational analysis at the def2-tzvp quantization level, resulting in optimized configurations with different spin multiplet degrees. Quantum chemistry software GaussView, wave function analysis software Multiwfn, and plotting software Origin are utilized for data characterization and graphical representation of the magnetic and electronic properties of the optimized configurations. Through the employment of these computational tools, valuable insights into the magnetic and electronic properties of the MnPS3 cluster and its dependency on different metal atoms are obtained. [ABSTRACT FROM AUTHOR]

Context: Energetic materials are a class of materials containing explosive groups or containing oxidants and combustibles. The optimization of energetic materials has a significant impact on the development of industry and national defense. For high-energy density compounds (HEDC) that have not been synthesized or are dangerous to experimental operation, it is of guiding significance to predict its energy level, physicochemical properties, and safety through molecular design and theoretical calculation. Cyclic urea nitramine series compounds are a type of energetic compounds with high density and excellent detonation performance. In this study, 2,5,7,9-tetranitro-2,5,7,9-tetraazabicyclo[4,3,0]nonane-8-one (K-56) was used as the parent structure, and 36 energetic derivatives were designed. The effects of introducing single and multiple substituents on the electronic structure, energy gap, heat of formation, detonation performance, thermal stability, thermodynamic parameters, and surface electrostatic potential of K-56 and its derivatives were discussed in detail. The results exhibit the following: (1) the single substitution of -C(NO2)3 (A6) can reduce the detonation velocity of K-56 by 11.9 % and the detonation pressure by 19.8 %, while the double substitution of -C(NO2)3 (B6) can increase the density of K-56 by 11.6 %, the detonation velocity by 10.9 %, and the detonation pressure by 31 %. (2) The heat of formation of K-56 (−110.0 kJ mol−1) increased by 324.18 % and 628.81 %, respectively, proving that -N3 is an extremely effective group to improve HOF. (3) The thermal stability of the derivatives generated by the monosubstitution of the target group on the six-membered ring is better than that of the parent compound. Methods: Gaussian16 and Multiwfn 3.8 packages are the software for calculation. In this study, the parent structure K-56 and its derivatives were optimized at the B3LYP/6-311G (d,p) level to obtain the zero point energy and thermal correction data of all compounds. Then the vibration analysis of the optimized structure is carried out to confirm that its configuration is stable. Then the M06-2X-D3/def2-TZVPP basis set is used to calculate the single point energy. [ABSTRACT FROM AUTHOR]

Context: The monoclinic L-histidine crystal is critical for protein structure and function and is also found in the myelin of brain nerve cells. This study numerically examines its structural, electronic, and optical properties. Our findings indicate that the L-histidine crystal has an insulating band gap of approximately 4.38 eV. Additionally, electron and hole effective masses range between 3.92 m 0 –15.33 m 0 and 4.16 m 0 –7.53 m 0 , respectively. Furthermore, our investigation suggests that the L-histidine crystal is an excellent UV collector due to its strong optical absorption activity for photon energies exceeding 3.5 eV. Methods: To investigate the structural, electronic, and optical properties of L-histidine crystals, we used the Biovia Materials Studio software to conduct Density Functional Theory (DFT) simulations as implemented in the CASTEP code. Our DFT calculations were performed using the generalized gradient approximation (GGA) as parameterized by the Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional, with an additional dispersion energy correction (PBE + TS) based on the model proposed by Tkatchenko and Scheffler to describe van der Waals interactions. Additionally, we employed the norm-conserving pseudopotential to treat core electrons. [ABSTRACT FROM AUTHOR]

Phthalocyanines represent a crucial class of organic compounds with high technological appeal. By doping the center of these systems with metals, one obtains the so-called metal-phthalocyanines, whose property of being an effective electron donor allows for potentially interesting uses in organic electronics. In this sense, investigating optical and electronic structure changes in the phthalocyanine profiles in the presence of different metals is of fundamental importance for evaluating the appropriateness of the resulting system as far as these uses are concerned. In the present work, we carry out this kind of effort for phthalocyanines doped with different metals, namely, copper, nickel, and magnesium. Density functional theory was applied to obtain the absorption spectra, and electronic and structural properties of the complexes. Our results suggest that depending on the dopant, a different level of change is achieved. Moreover, electrostatic potential energy mapping shows how the charge distribution can be affected by solar radiation. Our contribution is crucial in describing the best possible candidates for use in different organic photovoltaic applications. [ABSTRACT FROM AUTHOR]

Experimental measurement on oligomeric 4-(methoxyphenyl)acetonitrile (OMPA) synthesized via an electrochemical method indicated that the average chain length for OMPA was around 5 units (5-MPA) [ J Mol Struct 1031:186 (2013)], but did not provide enough information to completely characterize the chemical structure of the molecule. Nevertheless a possible structure was proposed on the basis of C NMR and the spin density hypothesis for radical polymerization. A more complete validation of the resultant structure is needed to show the extent to which the structure is consistent with a variety of measured properties. This is done here for the infrared (IR), ultraviolet-visible (UV-vis), and photoluminescence (PL) spectra of 5-MPA which are found to agree reasonably well with the experimentally measured spectra of OMPA. Electronic structure information regarding the highest-occupied molecular orbital (HOMO) and the lowest-unoccupied molecular orbital (LUMO) energies, ionization potentials and electron affinities, as well as optical properties (UV-vis, PL) is also provided. [ABSTRACT FROM AUTHOR]

We report on structural properties, elastic constants, mechanical and dynamical stabilities, electronic band structure, and hydrogen storage applications of Mg2FeH6 at zero and high-pressure effects. The work has been realized within the full-potential linearized augmented plane wave method. At zero pressure, the material under study is stable and has a ductile nature. The electronic structure of the material of interest is determined to be X-X wide direct band gap semiconductor with an energy of 1.88 eV. The hydrogen storage capacity wt (%) and the hydrogen desorption temperature are reported as 5.473 and 625.47 K respectively. The Debye temperature ϴD is recorded as 698 K using the elastic constants and about 775 K using the Gibbs calculations. Under high-pressure effect up to 80 GPa, the semiconductor still be an X-X semiconductor with an energy gap of 3.91 eV. The Debye temperature ϴD increases monotonically up to about 1120 K at 80 GPa when using the calculated elastic constants whereas the desorption temperature decreases from 650 to 0 K by increasing pressure from 0 to about 87 GPa. [ABSTRACT FROM AUTHOR]

Density functional theory (DFT) has been used to study the structure and electronic properties of boron-doped armchair germanene nanoribbons materials. The doped configurations are all stable in the electric field by the σ bond and the π bond. The doped structures can be semi-conductive or semi-metallic depending on the doping substitution positions. The doping configuration B:Ge = 1:1 proved to be superior and stable in the electric field, and the doping changed this structure to become planar. With three different directions of electric field, the horizontal electric field has the most influence on the geometric structure, multi-orbit hybridization as well as the spatial charge distribution of the doped systems. The magnetization of the systems changes with the changing direction of an electric field, anti-ferromagnetic structures are found in meta-configuration and ortho-configuration with longitudinal electric fields, and 1–1 configuration with perpendicular electric fields and horizontal electric fields. The ortho-configuration with an electric field of 0.5 V/m with an extended band gap of 0.69 eV is perfectly applicable in room-temperature field-effect transistors; other configurations have potential in nanoscale applications. [ABSTRACT FROM AUTHOR]

Among the family of lanthanide halides compounds, this work is devoted to the third halogen bromine. The presented lanthanum bromide LaBr molecule has a remarkable scientific interest regarding the other molecules because it presents few experimental studies and only one theoretical study. The theoretical electronic structure of the LaBr molecule is achieved by using the post-Hartree–Fock methods manifested by the complete active space self consistent field (CAS-SCF) method and the multi reference configuration interaction with single and double excitation (MRCI-SD) method. All of these calculations are performed via the quantum chemistry software MOLPRO. We predicted for the first time in the literature, 24 lowest-lying electronic states in the representation 2S+ 1Λ(±) and their corresponding components in the representation Ω(±) when taking into account the spin-orbit coupling (SOC), situated below 22,000 cm− 1. We calculated the spectroscopic constants for both cases (without/with SOC effects) related to the 13 singlet and 11 triplet states and for their components. We drew also in this paper the potential energy curves (PECs in a range of internuclear distance R varying from 2.00 to 4.22 Å. [ABSTRACT FROM AUTHOR]

This work discusses the possible HF formation routes via recombination reactions from CF3CH2F (R-134a) and its cation. The molecular properties of the main reagents were first evaluated at the M06-2X/cc-pVTZ level. Then, changes in energy (ΔE) for all reactions comprising a possible HF formation from the studied systems were evaluated at the CCSD(T)/CBS//M06-2X/cc-pVTZ level. With the aid of Intrinsic Reaction Coordinate (IRC) calculations for each path, it is found that the HF formation reaction takes place majorly through the "1,2" elimination, resulting in an olefin as the secondary product. In turn, the IRC associated with "2,2" reactions allowed to find a post-barrier complex between the carbene :CHCF3 and HF in its exit channel, with dissociation energy of ∼4 kcal mol−1. Similarly, the cationic system exhibits favoritism towards the "1,2" elimination, and an ion–dipole post-barrier complex is found. The ΔE of such a complex production is negative in both directions, indicating this complex (25.5 kcal/mol more stable than CF3CH2F+) should be a minimum on the R-134a cation surface. However, unlike the neutral "2,2" path, there is no F atom migration transition state for the 2,2-HF elimination from CF3CH2F+. Hence, the F migration is expected to occur simultaneously with the rest of the structural changes towards the ion–dipole complex. The rate coefficients computed at the current level of theory, including corrections for anharmonicity and hindered rotations, showed a reasonable agreement with the available experimental data, inspiring confidence in our predictions for the cationic system. [ABSTRACT FROM AUTHOR]

Based on the first-principles calculations of density functional theory (DFT), the crystal structure, molecular structure, electronic properties, and optical absorption properties of methyl urotropine perchlorate under hydrostatic compression in the range of 0 ~ 100 GPa were calculated. The results show that the crystal structure of methyl urotropine perchlorate undergoes two structural transformations under hydrostatic compression. The H1A-H1B bond breaks at 25 GPa, generating two new covalent bonds N3-H1A and O1-H1B. The covalent bonds of O2A-C1 and Cl1-H3A are formed at 85 GPa. The compression ratio of lattice constants (a, b, c) and unit cell volume change abruptly at 25 GPa and 85 GPa, respectively. The conclusion that new bonds are formed under high pressure is further demonstrated by analyzing the partial density of states (PDOS) of N3, H1A, O1, H1B, O2A, C1, Cl1, and H3A atoms. The absorption spectrum showed that the absorption peak of methyl urotropine perchlorate gradually enhanced with the increase of pressure and the highest absorption peak shifted to high frequency. Highlights: The structure of methyl urotropine perchlorate was optimized, and its lattice constants (a, b, c, and V) and compression ratios at different pressures were calculated. Methyl urotropine perchlorate undergoes two structural transitions at pressurization to 25 GPa and 85 GPa, with the breaking of old bonds and the formation of new bonds. The DOS of methyl urotropine perchlorate was analyzed, further confirming the structural transformation by high pressure. The effect of high pressure on optical absorption properties was investigated. [ABSTRACT FROM AUTHOR]

The structural stability, electronic structure, and optical properties of BN-doped black phosphorene systems at different concentrations were investigated using a density generalized theory approach based on the first principles. BN-doped black phosphorene was found to be more stable than B and N atom doping. With the increase of doping concentration, the stability of the structure gradually decreases, and the structure of the system with 25% doping concentration is the most stable. The intrinsic and N-doped black phosphorenes are direct bandgap semiconductors, and B and BN doping make the black phosphorene change from direct bandgap to the indirect bandgap. The total density of states is mainly contributed by the p-state electrons of the B and P atoms, and the N atoms have a role in the local density of states with little contribution to the overall one. The black phosphorene undergoes charge transfer between the B and N atoms. The amount of charge transfer increases with the increase of doping concentration. The BN-doped black phosphorene system is blue-shifted at the absorption and reflection peaks compared to the intrinsic black phosphorene system. From the dielectric constant, it is found that the doped system is shifted towards higher energy at the highest peak, leading to an increase in the intensity of the electric field generated by light, which is beneficial to increase the efficiency of photovoltaic power generation. The photoconductivity decreases and shifts toward higher energy after doping, with the most pronounced performance at BN doping concentrations of 12.5% and 25%. [ABSTRACT FROM AUTHOR]

Metal doping is an effective method for improving the toughness of ceramic materials and reducing coating fractures. In this study, first-principle calculations based on density functional theory were performed to study the formation energy, elastic constant, and electronic structure of Cu-doped TiN. The results reveal that Cu tends to replace the Ti sites in TiN crystal cells; with an increase in Cu concentration, the formation energy of the Cu-doped TiN system decreases. This indicates that the structural stability of Cu-doped TiN decreases. From the calculated elastic constant and the Voigt–Reuss–Hill approximation, it is evident that the bulk modulus B and shear modulus G decrease as the Cu concentration increases. However, G decreases more rapidly, thus increasing the B/G ratio. According to Paugh's ratio, the increase in B/G indicates an increase in the ductility of TiN. The results of the band structure, density of states, charge density, and Mulliken bond population analysis reveal that Cu doping reduces the covalent bond strength of TiN, enhances metallicity, and reduces the structural stability of the system, enhancing the toughness of TiN. The results of this study will provide theoretical and experimental guidance for improving the toughness of TiN coatings. [ABSTRACT FROM AUTHOR]

The effects of B, N, and BN doping of arsenene and different strains on the stability, electronic structure, and optical properties of BN-doped arsenene were investigated using a first-principles approach. It was found that B, N, and BN doping caused the bandgap of arsenene to shift from indirect-direct, and strong charge transfer occurred between arsenene and B, N, and BN, and the transfer between N atoms and arsenene was more intense. The binding energy of the BN-doped arsenene system is always negative at different strains and in a stable state, but the stability of the structure is gradually decreasing. The bandgap of the BN-doped arsenene system shows a trend of decreasing, then increasing, and then decreasing under different tensile and compressive deformations. The only difference is that the tensile deformation continues to increase the bandgap at 2%, while the compressive deformation decreases the bandgap. The p-state electrons of the As atom near the Fermi energy level make the main contribution to the BN-doped arsenene system, and the p-state electrons of the B atom have some contribution. Red shifting occurs at the absorption and reflection peaks for doped systems with tensile deformation of 1% to 5%, and the absorption and reflection peaks for doped systems with compressive deformation of − 1% to − 5%. [ABSTRACT FROM AUTHOR]

In this contribution, the electronic structures of two polymer donors (PBDB-T and PBDB-T-SF) and two non-fullerene acceptors (ITIC and IT-4F) are researched by density functional theory and time-dependent density functional theory, respectively. The research purpose is to rationalize the relationship between observed experimental performances and structural properties and obtain the effects of structures on their photovoltaic performances. The investigated properties involve in the structure characteristics, absorption spectra, carrier mobilities, and exciton dissociation properties at interfaces to locate the essences of different power conversion efficiency between PBDB-T/ITIC and PBDB-T-SF/IT-4F. The results suggest that both PBDB-T/ITIC and PBDB-T-SF/IT-4F systems have stable structures and relatively high HOMO levels, which benefits to relatively large VOC values. In addition, the larger PCE of PBDB-T-SF/IT-4F system originates from PBDB-T-SF's large hole transport properties and better exciton dissociation ability. Furthermore, the F and S incorporations enhance hole mobilities and exciton dissociation ability. Consequently, the theoretical results coincide well with the experimental ones. [ABSTRACT FROM AUTHOR]

Spectroscopic investigation of lanthanum monofluoride molecule LaF is carried out by ab-initio methods and all the observed band systems are predicted through the fine structure of LaH. This structure consisted of 67 Ω(±) states is calculated by taking into account the spin–orbit coupling effect of lanthanum. Therefore, these Ω(±) states are degenerated from 33 low-lying 1,3Λ(±) states below 33,200 cm−1. The potential energy curves (PECs) of 1,3Λ(±) and Ω(±) states are displayed in the range of internuclear distance from 1.40 to 3.00 Å and their spectroscopic constants ( R e , T e , ω e , ω e χ e ) are reported. Moreover, the permanent and the transition dipole moments are plotted as a function of internuclear distance. Furthermore, the composition of the Ω(±) state-wave functions in terms of Λ-S parent states is calculated at the equilibrium internuclear distance of the ground state. Furthermore, through calculating the splitting energy between the spin–orbit components of a 3Λ(±) state, Hund's case of many states involved in the observed band systems is determined. [ABSTRACT FROM AUTHOR]

In this study, the electronic and optical properties of one-dimensional (1D) single-walled carbon nanotube (SWCNT) nanostructures, and under the external electric field (E ext) applied in the z-direction, are investigated using density functional theory (DFT) calculations. The applied E ext leads to significant modulation of the bandgap and changes the total density of states (TDOS), partial density of states (PDOS), absorption coefficient, dielectric function, optical conductivity, refractive index, and the loss function. The application of the E ext on the SWCNT/Carboxyl structure leads to tighten its bandgap. The peaks of TDOS around the Fermi level are very weak. The absorption coefficient increases in visible range and decreases in ultraviolet (UV) domain proportionally with the E ext . It is found that electronic structures and optical properties of the SWCNT/Carboxyl could be affected by the E ext . All these results provide the important information for understanding and controlling the electronic and optical properties of 1D crystals by the E ext . This study establishes a theoretical foundation for our future experimental work regarding optoelectronic properties of the SWCNT/Carboxyl material. [ABSTRACT FROM AUTHOR]

Based on the first-principles calculations, the electronic structure and optical properties of the Mo-doped monolayer rhenium disulfide (ReS2) model are calculated, and the system stability, bond length, charge difference density, band structure, photoabsorption coefficient, system stability, and reflectivity are analyzed. The calculation results show that doping changes the structural stability of the system, which gradually decreases with an increasing concentration of doping. The calculation of band structure and density of states indicated that the band gap value of the system decreases continuously to 0 with increasing doping concentration, while the average charge population of atoms at doping sites keeps increasing with the better electron-losing ability of atoms. Compared with the intrinsic monolayer ReS2, the peak of systemic reflectivity at different doping concentrations has corresponding degrees of redshift in a certain wavelength range, as demonstrated by the optical properties. [ABSTRACT FROM AUTHOR]

The investigation of dye-sensitized solar cells (DSSCs) based on different donor groups linked with cyanoacrylic acid electron acceptor by Selenophene as π-bridged (D-π-A) was performed based on density functional theory (DFT) time-dependent DFT (TDDFT). Different functional were tested W97XD, PBEPBE, CAM-B3LYP, and B3PW91, and compared with experimental results of the reference D1. The theoretical results with CAM-B3LYP functional at 6-311G (d,p) basis sets were capable of predicting the absorption maximum that has been reported experimentally. Calculations were made to establish the conformational orientation of the cyanoacrylic acid group and evaluate the effect of changing donor units' on the electronic properties of the ground state. Structural and electronic properties, along with the photovoltaic properties, were investigated. The LUMO and HOMO energy levels of these dyes can positively affect the process of electron injection and dye regeneration. Light-harvesting efficiency (LHE), injection driving force (ΔGinject), and total reorganization energy (total) were also discussed. To further support the previous proprieties, electronic excited state energies were obtained by TDDFT// CAM-B3LYP/6-311G(d,p) calculations. The calculated results of these dyes reveal that D8 dye possessing triphenylamine donor unit has the best electronic, optical properties, and photovoltaic parameters. [ABSTRACT FROM AUTHOR]