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Context: The effect of X (X = O, Se, N, P, F, Cl) doping on the adsorption of Zn atoms by WS2 was investigated based on first principles. The electronic structure and optical properties of the adsorbed system after atomic doping were calculated. It is found that the Zn atom adsorbed on the W top (Tw) site has the most stable structure. When an S atom is replaced with an X atom based on the adsorption system, where the adsorption energy decreases after doping of O, P, F, and Cl atoms compared to the undoped system, it means that each system is more stable after doping of these atoms; charge transfer shows that the adsorption system after P-atom doping the system around the Zn atom loses electrons while S-atom gains electrons, which indicates that P-atom doping is favorable for the adsorption of Zn by WS2, N, P-atom is introduced as p-type doping and F, Cl-atom is introduced undoped by n-type doping, and the band gap of the doped system is less than that of the undoped one. With the introduction of different dopant atoms, certain impurity energy levels are introduced into the adsorption system. The prohibited bandwidth around the Fermi energy level reduces the density of states, causing the doped system's density of states to shift to lower energies, among which the shifts of N, P, F, and Cl are more pronounced. The P-doped adsorption system shows a new peak near the energy of − 11 eV. In addition, the study of optical properties showed that the peak reflections of both doped and non-doped systems adsorbing Zn atoms appeared in the ultraviolet region; the absorbance coefficient of the doped system is moved in the lower energy direction and red-shifted after atom doping; in addition, the absorption coefficients and reflectance of the P, Se doped systems are enhanced in the wavelength range of 200–300 nm compared with that before doping, the dielectric function and CBM and VBM positions were also calculated further indicating the potential of Se-doped systems in improving photocatalytic efficiency. Methods: In this paper, the structure optimization of X (X = O, Se, N, P, F, Cl) doping on WS2 adsorbed Zn atom model is performed based on the CASTEP module in Materials-Studio software under the first principles using GGA and PBE generalized function. The corresponding binding energies, bond lengths, bond angles, charge densities, energy band structures, densities of states, and optical properties were also analyzed. The Monkhorst–Pack particular K-point sampling method is used in the calculations; the K-point grid is 6 × 6 × 1, and the cutoff energy for the plane wave expansion is 500 eV. After geometric optimization, the iterative accuracy converges to a value of less than 1 × 10−5 eV/atom for the total energy of each atom and less than 0.03 eV/Å for all atomic forces. The thickness of the vacuum layer was set to 20 Å to avoid the effect of interlayer interaction forces. In this paper, 27 atoms were used to form a 3 × 3 × 1 supercellular tungsten disulfide system consisting of 18 S atoms and 9 W atoms. [ABSTRACT FROM AUTHOR]

Context: To lessen the impact of the dangerous metal Cr, this paper applies the first principles to investigate the adsorption behavior and photoelectric properties of GaS on Cr. The effects of doped GaS on Cr adsorption behavior are investigated with four GaS systems, which are pure, boron (B)-doped, nitrogen (N)-doped, and oxygen (O)-doped, in order to maximize the characteristics of GaS for use in novel sectors, to obtain understanding of the impact of doping on the electronic structure and optical properties of GaS adsorption of Cr, as well as to promote the development of the material. Four GaS adsorbed Cr systems, pure, B-doped, N-doped, and O-doped, are optimized, and the optimized results show that the stable adsorption position of Cr on both pure and doped GaS is the top position of Ga atoms, whereas doped elements B, N, and O can promote the adsorption of Cr on GaS, and the order of the strength of this promotion is B > N > O. Method: In this paper, molecular simulation calculations and analyses using the CASTEP module in the software Materials Studio are performed to simulate the structure optimization of GaS-adsorbed Cr materials doped with B, N, and O atoms by using the generalized gradient approximation (GGA) plane-wave pseudopotential approach [1] and the Perdew-Burke-Ernzerhof (PBE) generalized function [2]. From the convergence test, it is reasonable to set the K-point network to 4 × 4 × 1 and the truncation energy to 500 eV [3]. In this paper, a 3 × 3 × 1 supercell structure with 18 S atoms and 18 Ga atoms is selected. The convergence value of the iterative accuracy is 1.0e − 5 eV/atom, and all the atomic forces are less than 0.02 eV/Å. A vacuum layer of 16 Å is also set in the C direction to avoid interlayer interactions of GaS. First, we optimize the geometry of the model and then analyze the nature of the adsorption energy and electronic structure corresponding to the model. [ABSTRACT FROM AUTHOR]

Context: In this paper, the electronic and optical properties of Cr-doped monolayer MoS2 under uniaxial tensile strain are investigated by first-principle calculations. It is shown that uniaxial tensile strain can significantly change the electronic and optical properties of Cr-doped monolayer MoS2, and the bandgap value of the intrinsic MoS2 system gradually decreases with the increase of tensile strain, while the bandgap value of the Cr-doped MoS2 system is relatively stable. However, when the stretching reaches a certain degree, both the intrinsic and doped systems become metallic. From the analysis of the density of states, it is found that new electronic states and energy levels appear in the intrinsic MoS2 system and all Cr-doped monolayer MoS2 systems with the increase of the tensile strain, but the changes in the density of states diagrams of the Cr-doped monolayer MoS2 system are relatively small, which is mainly attributed to the effect of the Cr-doped atoms. The analysis of optical properties displays that the stretched doped system differs from the intrinsic MoS2 system in terms of dielectric function, absorption and reflection, energy loss function, and refractive index. Our results suggest that uniaxial tensile strain can be used as an effective means to modulate the electronic structure and optical properties of Cr-doped monolayer MoS2. These findings provide a theoretical basis for understanding the optoelectronic properties of MoS2 and its doped systems as well as their applications in optoelectronic devices. Methods: Based on the first principle of density functional theory framework and the CASTEP module in Materials Studio software (Perdew et al. in Phys Rev Lett 77(18):3865–3868, 1996). The structure of Cr atom-doped MoS2 systems and MoS2 systems were optimized using the generalized gradient approximation plane-wave pseudopotential method (GGA) and Perdew-Burke-Ernzerhof (PBE) generalized functions under 3%, 6%, and 9% tensile deformation, and the corresponding formation energy, bond length, electronic structure, and optical properties of the models were analyzed. The Grimme (J Comput Chem 27(15):1787–1799, 2006) vdW correction with 400 eV cutoff was used in Perdew-Burke-Ernzerhof (PBE) functional to optimize the geometry until the forces and energy converged to 0.02 eV/Å and 1.0e-5eV/atom, respectively. For each model structure optimization, the K-point grid was assumed to be 4×4×1, using the Monkhorst-Pack special K-point sampling method. After the MoS2 supercell convergence test, the plane-wave truncation energy was chosen to be 400 eV. Following geometric optimization, the iterative accuracy converged to no less than 1.0×10−5 eV/atom for total atomic energy and less than 0.02 eV/Å for all atomic forces. We created a vacuum layer of 18 Å along the Z-axis to prevent the impact of periodic boundary conditions and weak van der Waals forces between layers on the monolayer MoS2. In this paper, a total of 27 atoms were used for the 3×3×1 supercell MoS2 system, which consists of 18 S atoms and 9 Mo atoms. [ABSTRACT FROM AUTHOR]

Context: In this paper, the electronic and optical properties of Cr-doped monolayer MoS2 under uniaxial tensile strain are investigated by first-principle calculations. It is shown that uniaxial tensile strain can significantly change the electronic and optical properties of Cr-doped monolayer MoS2, and the bandgap value of the intrinsic MoS2 system gradually decreases with the increase of tensile strain, while the bandgap value of the Cr-doped MoS2 system is relatively stable. However, when the stretching reaches a certain degree, both the intrinsic and doped systems become metallic. From the analysis of the density of states, it is found that new electronic states and energy levels appear in the intrinsic MoS2 system and all Cr-doped monolayer MoS2 systems with the increase of the tensile strain, but the changes in the density of states diagrams of the Cr-doped monolayer MoS2 system are relatively small, which is mainly attributed to the effect of the Cr-doped atoms. The analysis of optical properties displays that the stretched doped system differs from the intrinsic MoS2 system in terms of dielectric function, absorption and reflection, energy loss function, and refractive index. Our results suggest that uniaxial tensile strain can be used as an effective means to modulate the electronic structure and optical properties of Cr-doped monolayer MoS2. These findings provide a theoretical basis for understanding the optoelectronic properties of MoS2 and its doped systems as well as their applications in optoelectronic devices. Methods: Based on the first principle of density functional theory framework and the CASTEP module in Materials Studio software (Perdew et al. in Phys Rev Lett 77(18):3865–3868, 1996). The structure of Cr atom-doped MoS2 systems and MoS2 systems were optimized using the generalized gradient approximation plane-wave pseudopotential method (GGA) and Perdew-Burke-Ernzerhof (PBE) generalized functions under 3%, 6%, and 9% tensile deformation, and the corresponding formation energy, bond length, electronic structure, and optical properties of the models were analyzed. The Grimme (J Comput Chem 27(15):1787–1799, 2006) vdW correction with 400 eV cutoff was used in Perdew-Burke-Ernzerhof (PBE) functional to optimize the geometry until the forces and energy converged to 0.02 eV/Å and 1.0e-5eV/atom, respectively. For each model structure optimization, the K-point grid was assumed to be 4×4×1, using the Monkhorst-Pack special K-point sampling method. After the MoS2 supercell convergence test, the plane-wave truncation energy was chosen to be 400 eV. Following geometric optimization, the iterative accuracy converged to no less than 1.0×10−5 eV/atom for total atomic energy and less than 0.02 eV/Å for all atomic forces. We created a vacuum layer of 18 Å along the Z-axis to prevent the impact of periodic boundary conditions and weak van der Waals forces between layers on the monolayer MoS2. In this paper, a total of 27 atoms were used for the 3×3×1 supercell MoS2 system, which consists of 18 S atoms and 9 Mo atoms. [ABSTRACT FROM AUTHOR]

Context: The electronic properties and optical properties of Cr-doped monolayer WS2 under uniaxial compressive deformation have been investigated based on density functional theory. In terms of electronic structure properties, both intrinsic and doped system bandgaps decrease with the increase of compression deformation, and the values of the bandgap under the same compression deformation after Cr doping are reduced compared with the corresponding intrinsic states. When the compressive deformation reaches 10%, both the intrinsic and doped system band gaps are close to zero. New electronic states and impurity energy levels appear in the WS2 system when doped with Cr atoms. For the optical properties, the calculation and analysis of the dielectric function under each deformation regime of monolayer WS2 show that the compression deformation affects the dielectric function, and when the compression deformation is 10%, the un-doped and Cr-doped regimes show a decrease in ε1(ω) compared to the compression deformation of 8%. For each deformation system, the peak reflections occur in the ultraviolet region. Near the position where the second peak of the absorption spectrum appears, it can be seen that the ability of each system to absorb light gradually decreases with the increase of the amount of deformation and appears to be red-shifted to varying degrees. Methods: This study follows the initial principles of the density functional theory framework and is based on the CASTEP module of Materials-Studio software GGA and PBE generalizations are used to perform computations such as geometry optimization of the model. We have calculated the energy band structure of monolayer WS2 with intrinsic and compressive deformations of 2% and 4% using PBE and HSE06, respectively. The band gap values calculated using PBE are 1.802 eV, 1.663 eV, and 1.353 eV, respectively, and the band gap values calculated with HSE06 are 2.267 eV, 2.034 eV, 1.751 eV. The results show that the bandgap values calculated by HSE06 are significantly higher than those calculated by PBE, but the bandgap variations calculated by the two methods have the same trend, and the shape characteristics of the energy band structure are also the same. However, it is worth noting that the computation time required for the HSE06 calculation is much longer than that of the PBE, which is far beyond the capability of our computer hardware, and the purpose of this paper is to investigate the change rule of the effect of deformation on the bandgap value, so to save the computational resources, the next calculations are all calculated using the PBE. The Monkhorst–Pack special K-point sampling method is used in the calculations. The cutoff energy for the plane wave expansion is 400 eV, and the K-point grid is assumed to be 5 × 5 × 1. Following geometric optimization, the iterative precision converges to a value of less than 0.03 eV/Å for all atomic forces and at least 1 × 10−5 eV/atom for the total energy of each atom. The vacuum layer's thickness was selected at 20 Å to mitigate the impact of the interlayer contact force. [ABSTRACT FROM AUTHOR]

Context: The electronic properties and optical properties of Cr-doped monolayer WS2 under uniaxial compressive deformation have been investigated based on density functional theory. In terms of electronic structure properties, both intrinsic and doped system bandgaps decrease with the increase of compression deformation, and the values of the bandgap under the same compression deformation after Cr doping are reduced compared with the corresponding intrinsic states. When the compressive deformation reaches 10%, both the intrinsic and doped system band gaps are close to zero. New electronic states and impurity energy levels appear in the WS2 system when doped with Cr atoms. For the optical properties, the calculation and analysis of the dielectric function under each deformation regime of monolayer WS2 show that the compression deformation affects the dielectric function, and when the compression deformation is 10%, the un-doped and Cr-doped regimes show a decrease in ε1(ω) compared to the compression deformation of 8%. For each deformation system, the peak reflections occur in the ultraviolet region. Near the position where the second peak of the absorption spectrum appears, it can be seen that the ability of each system to absorb light gradually decreases with the increase of the amount of deformation and appears to be red-shifted to varying degrees. Methods: This study follows the initial principles of the density functional theory framework and is based on the CASTEP module of Materials-Studio software GGA and PBE generalizations are used to perform computations such as geometry optimization of the model. We have calculated the energy band structure of monolayer WS2 with intrinsic and compressive deformations of 2% and 4% using PBE and HSE06, respectively. The band gap values calculated using PBE are 1.802 eV, 1.663 eV, and 1.353 eV, respectively, and the band gap values calculated with HSE06 are 2.267 eV, 2.034 eV, 1.751 eV. The results show that the bandgap values calculated by HSE06 are significantly higher than those calculated by PBE, but the bandgap variations calculated by the two methods have the same trend, and the shape characteristics of the energy band structure are also the same. However, it is worth noting that the computation time required for the HSE06 calculation is much longer than that of the PBE, which is far beyond the capability of our computer hardware, and the purpose of this paper is to investigate the change rule of the effect of deformation on the bandgap value, so to save the computational resources, the next calculations are all calculated using the PBE. The Monkhorst–Pack special K-point sampling method is used in the calculations. The cutoff energy for the plane wave expansion is 400 eV, and the K-point grid is assumed to be 5 × 5 × 1. Following geometric optimization, the iterative precision converges to a value of less than 0.03 eV/Å for all atomic forces and at least 1 × 10−5 eV/atom for the total energy of each atom. The vacuum layer's thickness was selected at 20 Å to mitigate the impact of the interlayer contact force. [ABSTRACT FROM AUTHOR]

Purposes: The paper aims to investigative the cacuses and impacts of In- and Vacancy-doped to 6H-SiC, expecting that improving optical properties of materials. Design-Using the first-principles calculations, we discuss the electronic structure and optical properties of different doped 6H-SiC systems. Findings: The results show that In-doped 6H-SiC becomes a direct bandgap p-type semiconductor and the energy bandgap is reduced from the intrinsic 2.059 to 1.515 eV. We demonstrate the stability of the systems through the formation energy analysis, meanwhile identify their physical origins and discuss applications of all structures in electronic devices within optical analysis. Find the energy beginning values of the VSi-doped and VC-doped systems' optical absorption spectrums and extend to 0.4 2 eV and 0.11 eV respectively compared with the original 3.23 eV. In the visible light region, the reflectivity images of the VC/VSi and (In, VSi)-codoped systems rise obviously. Conclusions: The optical properties of all doping systems were analyzed to be improved compared with the intrinsic, all above mentioned provide a theoretical basis for the fabrication of spintronic and optical devices. [ABSTRACT FROM AUTHOR]

Context: In this study, the effects of different shear deformations on the structural stability, electronic structure, and optical properties of a Mg atom adsorption system of S vacancy defect SnS2 are systematically investigated based on density functional theory. It is shown that the presence of an S-vacancy defect makes the band gap of the SnS2 system significantly smaller than that of the perfect SnS2 system, and the SnS2 system is changed from a direct band gap semiconductor to an indirect band gap semiconductor. The optimal adsorption position of a Mg atom on the S-vacancy SnS2 system is above the S atom where the adsorption energy is the largest and the system is the most stable. The density of states of the adsorption system is predominantly contributed by the S-3p and Sn-5 s orbital electrons. The imposition of shear deformation leads to the introduction of certain impurity energy levels in the adsorption system, and the forbidden bandwidth near the Fermi energy level decreases. As compared to the intrinsic SnS2, the absorption and reflection peaks of adsorption systems under different shear deformation are red-shifted and appear in the ultraviolet region. This improves the utilization of the adsorption system for ultraviolet light to a great extent. Methods: The model calculations in this paper are performed using the CASTEP module of the Material Studio (MS) software based on the first principles of Density Functional Theory (DFT) (Wei et al. in Physica B 545:99–106, 2018) for plane wave artifacts. Geometrical optimization and computational procedures are used to calculate the exchange–correlation energy using the Perdew-Burke-Ernzerhof (PBE) generalized function (Perdew et al. in Phys Rev B Condens Matter 48:4978, 1993) of the generalized gradient approximation (GGA). The Monkhorst–Pack method (Monkhorst and Pack in Phys Rev B 13:5188–5192, 1976) was used to rationalize the sampling of the highly symmetric k-points in the Brillouin zone. The grid of k-points is set to be 6 × 6 × 1. The plane-wave truncation energy is set to be 400 eV. The energy convergence criterion is 1.0 × 10−5 eV. The residual stress of all atoms is 0.01 eV/Å. A vacuum layer with a thickness of 15 Å is set up in the z-direction, which ensures that the interactions of the system along the z-axis between the top and the bottom layers can be ignored during the whole simulation process. We construct a 3 × 3 × 1 SnS2 system containing 27 atoms as the computational model. The intrinsic SnS2 contains 9 Sn atoms and 18 S atoms. [ABSTRACT FROM AUTHOR]

Context: In this study, the effects of different shear deformations on the structural stability, electronic structure, and optical properties of a Mg atom adsorption system of S vacancy defect SnS2 are systematically investigated based on density functional theory. It is shown that the presence of an S-vacancy defect makes the band gap of the SnS2 system significantly smaller than that of the perfect SnS2 system, and the SnS2 system is changed from a direct band gap semiconductor to an indirect band gap semiconductor. The optimal adsorption position of a Mg atom on the S-vacancy SnS2 system is above the S atom where the adsorption energy is the largest and the system is the most stable. The density of states of the adsorption system is predominantly contributed by the S-3p and Sn-5 s orbital electrons. The imposition of shear deformation leads to the introduction of certain impurity energy levels in the adsorption system, and the forbidden bandwidth near the Fermi energy level decreases. As compared to the intrinsic SnS2, the absorption and reflection peaks of adsorption systems under different shear deformation are red-shifted and appear in the ultraviolet region. This improves the utilization of the adsorption system for ultraviolet light to a great extent. Methods: The model calculations in this paper are performed using the CASTEP module of the Material Studio (MS) software based on the first principles of Density Functional Theory (DFT) (Wei et al. in Physica B 545:99–106, 2018) for plane wave artifacts. Geometrical optimization and computational procedures are used to calculate the exchange–correlation energy using the Perdew-Burke-Ernzerhof (PBE) generalized function (Perdew et al. in Phys Rev B Condens Matter 48:4978, 1993) of the generalized gradient approximation (GGA). The Monkhorst–Pack method (Monkhorst and Pack in Phys Rev B 13:5188–5192, 1976) was used to rationalize the sampling of the highly symmetric k-points in the Brillouin zone. The grid of k-points is set to be 6 × 6 × 1. The plane-wave truncation energy is set to be 400 eV. The energy convergence criterion is 1.0 × 10−5 eV. The residual stress of all atoms is 0.01 eV/Å. A vacuum layer with a thickness of 15 Å is set up in the z-direction, which ensures that the interactions of the system along the z-axis between the top and the bottom layers can be ignored during the whole simulation process. We construct a 3 × 3 × 1 SnS2 system containing 27 atoms as the computational model. The intrinsic SnS2 contains 9 Sn atoms and 18 S atoms. [ABSTRACT FROM AUTHOR]

Context: The monoclinic L-histidine crystal is critical for protein structure and function and is also found in the myelin of brain nerve cells. This study numerically examines its structural, electronic, and optical properties. Our findings indicate that the L-histidine crystal has an insulating band gap of approximately 4.38 eV. Additionally, electron and hole effective masses range between 3.92 m 0 –15.33 m 0 and 4.16 m 0 –7.53 m 0 , respectively. Furthermore, our investigation suggests that the L-histidine crystal is an excellent UV collector due to its strong optical absorption activity for photon energies exceeding 3.5 eV. Methods: To investigate the structural, electronic, and optical properties of L-histidine crystals, we used the Biovia Materials Studio software to conduct Density Functional Theory (DFT) simulations as implemented in the CASTEP code. Our DFT calculations were performed using the generalized gradient approximation (GGA) as parameterized by the Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional, with an additional dispersion energy correction (PBE + TS) based on the model proposed by Tkatchenko and Scheffler to describe van der Waals interactions. Additionally, we employed the norm-conserving pseudopotential to treat core electrons. [ABSTRACT FROM AUTHOR]

The structural stability, electronic structure, and optical properties of BN-doped black phosphorene systems at different concentrations were investigated using a density generalized theory approach based on the first principles. BN-doped black phosphorene was found to be more stable than B and N atom doping. With the increase of doping concentration, the stability of the structure gradually decreases, and the structure of the system with 25% doping concentration is the most stable. The intrinsic and N-doped black phosphorenes are direct bandgap semiconductors, and B and BN doping make the black phosphorene change from direct bandgap to the indirect bandgap. The total density of states is mainly contributed by the p-state electrons of the B and P atoms, and the N atoms have a role in the local density of states with little contribution to the overall one. The black phosphorene undergoes charge transfer between the B and N atoms. The amount of charge transfer increases with the increase of doping concentration. The BN-doped black phosphorene system is blue-shifted at the absorption and reflection peaks compared to the intrinsic black phosphorene system. From the dielectric constant, it is found that the doped system is shifted towards higher energy at the highest peak, leading to an increase in the intensity of the electric field generated by light, which is beneficial to increase the efficiency of photovoltaic power generation. The photoconductivity decreases and shifts toward higher energy after doping, with the most pronounced performance at BN doping concentrations of 12.5% and 25%. [ABSTRACT FROM AUTHOR]

The effects of B, N, and BN doping of arsenene and different strains on the stability, electronic structure, and optical properties of BN-doped arsenene were investigated using a first-principles approach. It was found that B, N, and BN doping caused the bandgap of arsenene to shift from indirect-direct, and strong charge transfer occurred between arsenene and B, N, and BN, and the transfer between N atoms and arsenene was more intense. The binding energy of the BN-doped arsenene system is always negative at different strains and in a stable state, but the stability of the structure is gradually decreasing. The bandgap of the BN-doped arsenene system shows a trend of decreasing, then increasing, and then decreasing under different tensile and compressive deformations. The only difference is that the tensile deformation continues to increase the bandgap at 2%, while the compressive deformation decreases the bandgap. The p-state electrons of the As atom near the Fermi energy level make the main contribution to the BN-doped arsenene system, and the p-state electrons of the B atom have some contribution. Red shifting occurs at the absorption and reflection peaks for doped systems with tensile deformation of 1% to 5%, and the absorption and reflection peaks for doped systems with compressive deformation of − 1% to − 5%. [ABSTRACT FROM AUTHOR]

In this study, the electronic and optical properties of one-dimensional (1D) single-walled carbon nanotube (SWCNT) nanostructures, and under the external electric field (E ext) applied in the z-direction, are investigated using density functional theory (DFT) calculations. The applied E ext leads to significant modulation of the bandgap and changes the total density of states (TDOS), partial density of states (PDOS), absorption coefficient, dielectric function, optical conductivity, refractive index, and the loss function. The application of the E ext on the SWCNT/Carboxyl structure leads to tighten its bandgap. The peaks of TDOS around the Fermi level are very weak. The absorption coefficient increases in visible range and decreases in ultraviolet (UV) domain proportionally with the E ext . It is found that electronic structures and optical properties of the SWCNT/Carboxyl could be affected by the E ext . All these results provide the important information for understanding and controlling the electronic and optical properties of 1D crystals by the E ext . This study establishes a theoretical foundation for our future experimental work regarding optoelectronic properties of the SWCNT/Carboxyl material. [ABSTRACT FROM AUTHOR]

Based on the first-principles calculations, the electronic structure and optical properties of the Mo-doped monolayer rhenium disulfide (ReS2) model are calculated, and the system stability, bond length, charge difference density, band structure, photoabsorption coefficient, system stability, and reflectivity are analyzed. The calculation results show that doping changes the structural stability of the system, which gradually decreases with an increasing concentration of doping. The calculation of band structure and density of states indicated that the band gap value of the system decreases continuously to 0 with increasing doping concentration, while the average charge population of atoms at doping sites keeps increasing with the better electron-losing ability of atoms. Compared with the intrinsic monolayer ReS2, the peak of systemic reflectivity at different doping concentrations has corresponding degrees of redshift in a certain wavelength range, as demonstrated by the optical properties. [ABSTRACT FROM AUTHOR]

In order to further explore the properties of graphene-reinforced matrix composites, the adsorption behaviors of intrinsic graphene, vacant defect graphene (VG), and Nd-doped graphene (Nd-doped) adsorbed with Ti were studied. The calculation results show that, compared with intrinsic graphene, the p-type doping and n-type doping are formed in the VG and Nd-doped, respectively. After the Ti adsorption of the above three adsorption systems, the stability of the VG and Nd-doped systems has been significantly improved. What's more, in optical performance, the absorption peaks and reflection peaks have different degrees of red-shift compared with the intrinsic graphene, indicating both adsorption and doping will change the spectral characteristics of graphene. Meanwhile, Ti adsorption can enhance absorption and reflection of graphene in the low-energy region. This study provides a novel method with the exploration of the new function of graphene for the better application of graphene-reinforced matrix composites in optoelectronic equipment in the future. [ABSTRACT FROM AUTHOR]

The structural, electronic, optical, and vibrational properties of B3N3H6 have been calculated by means of the first-principles density functional theory (DFT) calculations within the generalized gradient approximation (GGA) and the local density approximation (LDA). The calculated structural parameters of B3N3H6 are in good agreement with experimental data. The obtained band structure of B3N3H6 shows that it has an indirect band gap with 5.007 eV, indicating that it presents insulation characteristic. The total and partial density of states (DOS) of B3N3H6 are given, which tell us the states of the orbital occupation. With the band structure and density of states, we have analyzed the optical properties including the complex dielectric function, refractive index, absorption, conductivity, loss function, and reflectivity. By the contrast, it is found that optical anisotropy is observed in the (001) direction and (100) direction. Moreover, the vibrational properties have been obtained and analyzed, showing that B3N3H6 is dynamically stable due to that there is no imaginary frequency. The frequencies associating with the vibrations are given, which show that B3N3H6 has a low mechanical modulus and thermal conductivity. [ABSTRACT FROM AUTHOR]