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The extended Kantorovich method using multi-term displacement functions is applied to the buckling problem of laminated plates with various boundary conditions. The out-of-plane displacement of the buckled plate is written as a series of products of functions of parameter x and functions of parameter y. With known functions in parameter x or parameter y, a set of governing equations and a set of boundary conditions are obtained after applying the variational principle to the total potential energy of the system. The higher order differential equations are then transformed into a set of first-order differential equations and solved for the buckling load and mode. Since the governing equations are first-order differential equations, solutions can be obtained analytically with the out-of-plane displacement written in the form of an exponential function. The solutions from the proposed technique are verified with solutions from the literature and FEM solutions. The bucking loads correspond very well to other available solutions in most of the comparisons. The buckling modes also compare very well with the finite element solutions. The proposed solution technique transforms higher-order differential equations to first-order differential equations, and they are analytically solved for out-of-plane displacement in the form of an exponential function. Therefore, the proposed solution technique yields a solution which can be considered as an analytical solution. [ABSTRACT FROM AUTHOR]

When exploring the buckling mechanism in indium antimonide (InSb) detector, the global square checkerboard buckling pattern reappears in finite element simulation results. The contributions from the three layered materials to the deformations along the Z-direction are systematically analyzed. Analysis of results shows that the buckling deformation originated from the thermal difference between silicon readout integrated circuits (silicon-ROIC) and the intermediate layer directly above. Furthermore, the buckling pattern is determined by indium bumps array. After passing through the 10 μm intermediate layer, the deformation amplitude is significantly reduced from 2.23 μm to 0.24 μm. Afterwards, passing upward through the 10 μm InSb chip, the maximal deformation is further decreased to 0.09 μm. [ABSTRACT FROM AUTHOR]