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The influence of stress on the phase boundaries of polycrystalline lead-free perovskite (1 − x)Ba(Zr0.2Ti0.8)O3–x(Ba0.7Ca0.3)TiO3 (x = 0.4, 0.5, and 0.6) was characterized through the temperature- and stress-dependent small-signal dielectric and piezoelectric response from − 150 to 200 °C under uniaxial compressive stress up to − 75 MPa. For all three compositions, the phase transition temperatures separating the rhombohedral, orthorhombic, tetragonal, and cubic phases were shifted to higher temperatures with an increase in the uniaxial mechanical loading, corresponding to a significant decrease in the dielectric and piezoelectric responses. Additional stress-dependent relative permittivity measurements up to − 260 MPa were conducted at four different constant temperatures (− 10, 10, 25, and 40 °C), revealing significant increases in the dielectric response, making these materials interesting for tunable dielectric applications. Furthermore, the stress-induced shift in phase transition temperatures was confirmed by in situ combined temperature- and stress-dependent Raman spectroscopy measurements under different constant uniaxial loads within the temperature range from 30 to 130 °C. [ABSTRACT FROM AUTHOR]

Sintering conditions govern the optimized functional properties of ceramics. However, solid-state processing of Bi1/2K1/2TiO3 (BKT), an important end member for lead-free piezoelectric solid solutions suitable for higher temperature (≤ 300 °C) transducer applications, is challenging due to the low melting temperature (≈1070 °C). In this work, the sintering temperature (1030 °C, 1050 °C, and 1060 °C) and dwell time (10 h, 20 h, and 40 h)-dependent functional properties of solid-state processed BKT were investigated, where the sintering condition-dependent dielectric and electromechanical properties were correlated with the variations in crystal structure and microstructure. Although X-ray diffraction data revealed a single-phase tetragonal structure of BKT at room temperature for all sintering conditions, significant changes in both the tetragonal distortion and spontaneous relaxor-ferroelectric transition were observed, which were directly related to the optimized functional properties. In addition, Rayleigh behavior of the piezoelectric coefficient was characterized between −150 °C and 400 °C, demonstrating that the electromechanical response is dominated by the intrinsic contribution, which can be explained by large tetragonal distortion and associated suppression of non-180° domain wall motion. [ABSTRACT FROM AUTHOR]

Sintering conditions govern the optimized functional properties of ceramics. However, solid-state processing of Bi1/2K1/2TiO3 (BKT), an important end member for lead-free piezoelectric solid solutions suitable for higher temperature (≤ 300 °C) transducer applications, is challenging due to the low melting temperature (≈1070 °C). In this work, the sintering temperature (1030 °C, 1050 °C, and 1060 °C) and dwell time (10 h, 20 h, and 40 h)-dependent functional properties of solid-state processed BKT were investigated, where the sintering condition-dependent dielectric and electromechanical properties were correlated with the variations in crystal structure and microstructure. Although X-ray diffraction data revealed a single-phase tetragonal structure of BKT at room temperature for all sintering conditions, significant changes in both the tetragonal distortion and spontaneous relaxor-ferroelectric transition were observed, which were directly related to the optimized functional properties. In addition, Rayleigh behavior of the piezoelectric coefficient was characterized between −150 °C and 400 °C, demonstrating that the electromechanical response is dominated by the intrinsic contribution, which can be explained by large tetragonal distortion and associated suppression of non-180° domain wall motion. [ABSTRACT FROM AUTHOR]

The room temperature aerosol deposition method is especially promising for the rapid deposition of ceramic thick films, making it interesting for functional components in energy, mobility, and telecommunications applications. Despite this, a number of challenges remain, such as an enhanced electrical conductivity and internal residual stresses in as-deposited films. In this work, a novel technique that integrates a sacrificial water-soluble buffer layer was used to fabricate freestanding ceramic thick films, which allows for direct observation of the film without influence of the substrate or prior thermal treatment. Here, the temperature-dependent chemical and structural relaxation phenomena in freestanding BaTiO3 films were directly investigated by characterizing the thermal expansion properties and temperature-dependent crystal structure as a function of oxygen partial pressure, where a clear nonlinear, hysteretic contraction was observed during heating, which is understood to be influenced by lattice defects. As such, aliovalent doping and atmosphere-dependent annealing experiments were used to demonstrate the influence of local chemical redistribution and oxygen vacancies on the thermal expansion, leading to insight into the origin of the high room temperature conductivity of as-deposited films as well as greater insight into the influence of the induced chemical, structural, and microstructural changes in room temperature deposited functional ceramic thick films. [ABSTRACT FROM AUTHOR]

The influence of stress on the phase boundaries of polycrystalline lead-free perovskite (1 − x)Ba(Zr0.2Ti0.8)O3–x(Ba0.7Ca0.3)TiO3 (x = 0.4, 0.5, and 0.6) was characterized through the temperature- and stress-dependent small-signal dielectric and piezoelectric response from − 150 to 200 °C under uniaxial compressive stress up to − 75 MPa. For all three compositions, the phase transition temperatures separating the rhombohedral, orthorhombic, tetragonal, and cubic phases were shifted to higher temperatures with an increase in the uniaxial mechanical loading, corresponding to a significant decrease in the dielectric and piezoelectric responses. Additional stress-dependent relative permittivity measurements up to − 260 MPa were conducted at four different constant temperatures (− 10, 10, 25, and 40 °C), revealing significant increases in the dielectric response, making these materials interesting for tunable dielectric applications. Furthermore, the stress-induced shift in phase transition temperatures was confirmed by in situ combined temperature- and stress-dependent Raman spectroscopy measurements under different constant uniaxial loads within the temperature range from 30 to 130 °C. [ABSTRACT FROM AUTHOR]