1. [Untitled]
- Author
-
Ch. Angelov, M I Baleva, E. Goranova, and G. Beshkov
- Subjects
Materials science ,Ion beam ,Band gap ,Analytical chemistry ,Infrared spectroscopy ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Ion implantation ,Phase (matter) ,Transmittance ,Electrical and Electronic Engineering ,Thin film ,Refractive index - Abstract
Continuous layers and precipitates of the β-FeSi2 phase were formed by ion-beam synthesis followed by rapid thermal annealing. Two steps of Fe+ ion implantation in Si, at energies of 20 and 60 keV, were performed, using three different doses – 5×1015, 5×1016, and 1017 cm−2. The infrared spectra were used as a criterion for the formation of the β-FeSi2 phase. The refractive-index-energy dependences were calculated from the transmittance and reflectance spectra, using the general matrix method. From these dependences, the energy band gap and the energies of the higher-energy transitions in the vicinity of the gap were determined.
- Published
- 2003