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Recently, lead-free double perovskites of Cs2AgBiBr6 have attracted worldwide attention as a promising candidate for eco-friendly photovoltaics because of their intrinsic environmental stability and highly desired low toxicity in comparison with conventional lead halide counterparts. However, their power conversion efficiency (PCE) is still far lower than that of lead halide perovskites, which is mainly associated with their poor quality films. Herein, we report a facile process via precursor engineering based on the BiBr3(DMSO)2 adduct solution to produce high-coverage and smooth Cs2AgBiBr6 films with large grains. As a result, the as-constructed planar solar cells deliver a champion PCE of 0.73%, which exhibits an enhancement of over 40% in PCE compared to that of the control sample, suggesting their potential to be applied in lead-free bismuth-based optoelectronic devices. [ABSTRACT FROM AUTHOR]

In the present study, the field emission (FE) behaviors of CsPbI3 nanobelts were reported, which were synthesized via a one-step facile solvothermal method. The obtained CsPbI3 nanobelts were single crystalline in nature with a typical growth direction along [100]. It was disclosed that the valence band maximum (VBM) and conduction band minimum (CBM) vs. vacuum level of the CsPbI3 nanobelts were located at −4.86 and −2.16 eV, respectively, and their work function (Φ) was calculated to be of 3.56 eV. The as-grown CsPbI3 nanobelts exhibited outstanding field emission (FE) characteristics with a low turn-on field (Eto) of ∼2.62 V μm−1 and a high field enhancement factor of 3553, representing their potential applications in field emission display devices. [ABSTRACT FROM AUTHOR]

Although significant progress has been made in the development of all-inorganic CsPbI3 (X = Br, Cl and I) perovskites, some crucial points typically concerning their stability and toxicity due to the presence of Pb are yet to be addressed. In the present study, we report the growth of qualified all-inorganic CsPbI3 perovskite nanobelts with high yield and purity via a solvothermal route; herein, Sn has been incorporated to substitute Pb to reduce the toxicity of these nanobelts. XPS analyses showed that the Sn-doped CsPbI3 nanobelts were substantially stabilized and exhibited satisfied stability for up to 15 days when maintained under air conditions. The as-constructed photodetectors (PDs) based on a single CsPb0.922Sn0.078I3 nanobelt displayed overall excellent performance with an ultrahigh detectivity of up to 6.43 × 1013 Jones, which was comparable to the best values of all-inorganic perovskite PDs reported to date. [ABSTRACT FROM AUTHOR]