1. Enhanced band-tuning and quality of Ni-doped Ga2O3 films via low-power RF magnetron sputtering.
- Author
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Hsu, Chia-Hsun, Zhu, Yu-Quan, Huang, Ruo-Yan, Huang, Pao-Hsun, Wang, Chen, Cho, Yun-Shao, and Lien, Shui-Yang
- Abstract
Low power density radio-frequency (RF) magnetron sputtering of Ni-doped gallium oxide (Ga
2 O3 ) films offers notable advantages in terms of improved film quality and realizable band-tuning. In this research, the Ni-doped Ga2 O3 films are deposited on a substrate using RF magnetron sputtering at different powers of 70–140 W. The effects of low sputtering power on the optical and chemical properties of Ni-doped Ga2 O3 films are studied. The experimental results illustrate that an effective Ni doping is observed at higher than 100 W as shown by the obvious increase in the intensity of the Ni plasma radicals and the Ni atomic ratio. The Ni-doped Ga2 O3 film prepared at 120 W reveals a larger cluster size and maximum ratios of Ni3+ and non-lattice oxygen, resulting in the highest values in mobility and carrier concentration of 3.5 cm2 V−1 s−1 and 5.0 × 1016 cm−3 , respectively. With increasing powers, a decrease in the band gap from 5.2 to 4.8 eV is observed. The RF sputtering of Ni-doped Ga2 O3 films at a lower power density, ranging from 0.18 to 0.36 W cm−2 , provides an alternative in large-area industrial applications. [ABSTRACT FROM AUTHOR]- Published
- 2024
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