1. In situ Al2O3 incorporation enhances the efficiency of CuIn(S,Se)2 solar cells prepared from molecular-ink solutions
- Author
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J. P. Bradley, Wilman Septina, Thomas West, Craig L. Perkins, K. K. Ohtaki, Kai Zhu, Hope A. Ishii, Christopher P. Muzzillo, Nicolas Gaillard, and Anne Curtis Giovanelli
- Subjects
010302 applied physics ,Auger electron spectroscopy ,Spin coating ,Materials science ,Passivation ,Renewable Energy, Sustainability and the Environment ,Energy conversion efficiency ,Analytical chemistry ,02 engineering and technology ,General Chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Amorphous solid ,law.invention ,Transmission electron microscopy ,law ,0103 physical sciences ,Solar cell ,General Materials Science ,0210 nano-technology ,Chemical bath deposition - Abstract
We report an efficiency enhancement of solution-processed CuIn(S,Se)2 (CISSe) thin film solar cells via in situ incorporation of Al2O3. These films were produced using inks containing CuCl, InCl3, AlNO3 (Al/Al + In: 0.1) and thiourea dissolved in methanol. After spin coating of these solutions in air, samples were subjected to a selenization process. Auger electron spectroscopy depth-profiling analysis showed that Al is evenly distributed throughout the bulk of the film. Transmission electron microscopy revealed that AlNO3 precursor reacted with oxygen to form nanosized amorphous Al2O3 grains located within the bulk and grain boundaries of CISSe, as well as at both the top and bottom interfaces. Power conversion efficiency (PCE) as high as 11.6% (JSC: 35.8 mA cm−2, VOC: 518 mV, FF: 62.2%, no anti-reflection coating) was achieved with Al–CISSe solar cell devices integrated with CdS (chemical bath deposition, thickness: 80 nm) and ZnO/ITO bilayers (sputtered, thickness: 300 nm). The average PCE (10.1%, 〈JSC〉: 34.5 mA cm−2, 〈VOC〉: 491 mV, 〈FF〉: 59.8%) was nearly 4% (absolute) higher than that measured on CISSe baseline cells fabricated from solutions without Al (〈PCE〉 = 6.4%, 〈JSC〉: 32.8 mA cm−2, 〈VOC〉: 410 mV, 〈FF〉: 47.3%). This in situ Al2O3 incorporation is speculated to play a role in the enhancement of the VOC and FF of the devices through passivation of defects in CISSe reducing interface and bulk recombination, as evidenced by a reduced defect density and an increased activation energy of the dominant recombination mechanism from capacitance and temperature-dependent VOC measurements, respectively.
- Published
- 2021