1. Synthesis and characterization of Ni-doped ZnO: A transparent magnetic semiconductor
- Author
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D.K. Avasthi, J.C. Pivin, Babita Pandey, D. Kabiraj, Santanu Ghosh, P. C. Srivastava, CSNSM PCI, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
FERROMAGNETIC SEMICONDUCTORS ,Materials science ,Grazing angle X-ray diffraction ,Analytical chemistry ,Magnetic property ,02 engineering and technology ,01 natural sciences ,Magnetization ,THIN-FILMS ,DESIGN ,Electrical resistivity and conductivity ,High-resolution transmission electron microscopy ,0103 physical sciences ,NANOPARTICLES ,OXIDES ,Thin film ,010302 applied physics ,Condensed matter physics ,Doping ,Transparent magnetic semiconductor ,Magnetic semiconductor ,Sputter deposition ,Coercivity ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,CO ,ROOM-TEMPERATURE ,Ferromagnetism ,SPINTRONICS ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,0210 nano-technology - Abstract
We report synthesis of a transparent magnetic semiconductor by incorporating Ni in zinc oxide (ZnO) matrix. ZnO and nickel-doped zinc oxide (ZnO: Ni) thin films (similar to 60 nm) are prepared by fast atom beam (FAB) sputtering. Both undoped and doped films show the presence of ZnO phase only. The Ni concentration ( in at%) as determined by energy dispersive X-ray (EDX) technique is similar to 12 +/- 2%. Magnetisation measurement using a SQUID magnetometer shows that the Ni-doped films are ferromagnetic, having coercivity (H(c)) values 192, 310 and 100 Oe and saturation magnetization (M(s)) values of 6.22, 5.32 and 4.73 emu/g at 5, 15 and 300 K, respectively. The Ni-doped film is transparent (> 80%) across visible wavelength range. Resistivity of the ZnO: Ni film is similar to 2.5 x 10(-3) Omega cm, which is almost two orders of magnitude lower than the resistivity (similar to 4.5 x 10(-1) Omega cm) of its undoped counterpart. Impurity d-band splitting is considered to be the cause of increase in conductivity. Interaction between free charges generated by doping and localized d spins of Ni is discussed as the reason for ferromagnetism in the ZnO: Ni film. (C) 2008 Elsevier B.V. All rights reserved.
- Published
- 2008
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