1. Low-temperature crystallisation of Heusler alloy films with perpendicular magnetic anisotropy
- Author
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Atsufumi Hirohata, Marjan Samiepour, and William James Frost
- Subjects
010302 applied physics ,Materials science ,Spintronics ,Condensed matter physics ,Alloy ,chemistry.chemical_element ,02 engineering and technology ,engineering.material ,Tungsten ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,law.invention ,chemistry ,law ,0103 physical sciences ,Perpendicular ,engineering ,Antiferromagnetism ,Perpendicular anisotropy ,Crystallization ,0210 nano-technology ,Layer (electronics) - Abstract
We demonstrate that perpendicular anisotropy can be induced in Co2FeAl0.5Si0.5 by depositing the Heusler alloy on a tungsten seed layer. This is increased by elevating the deposition temperature to a moderate value up to 335 K. These perpendicular layers can be implemented into GMR devices, showing layer-thickness dependent switching without the use of an antiferromagnetic pinning-layer. These layers can be implemented into the manufacturing process of read-heads, where temperatures are limited.
- Published
- 2019