1. Two-Stage Cryogenic HEMT-Based Amplifier for Low-Temperature Detectors.
- Author
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Anczarski, Jadyn, Dubovskov, Makar, Fink, Caleb W., Kevane, Sukie, Kurinsky, Noah, Mazumdar, Aparajita, Meijer, Samuel J., Phipps, Arran, Ronning, Filip, Rydstrom, Ivar, Simchony, Aviv, Smith, Zoë, Thomas, Sean, Watkins, Samuel L., and Young, Betty
- Subjects
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DETECTORS , *MODULATION-doped field-effect transistors , *CRYOGENICS , *DARK matter , *INSULATING materials , *RAPID prototyping , *ELECTRONIC circuits - Abstract
To search for dark matter candidates with masses below O (MeV), the SPLENDOR (Search for Particles of Light dark mattEr with Narrow-gap semiconDuctORs) experiment is developing novel narrow-bandgap semiconductors with electronic bandgaps on the order of 1–100 meV. In order to detect the charge signal produced by scattering or absorption events, SPLENDOR has designed a two-stage cryogenic HEMT-based amplifier with an estimated charge resolution approaching the single-electron level. A low-capacitance (∼ 1.6 pF) HEMT is used as a buffer stage at T = 10 mK to mitigate effects of stray capacitance at the input. The buffered signal is then amplified by a higher-capacitance (∼ 200 pF) HEMT amplifier stage at T = 4 K. Importantly, the design of this amplifier makes it usable with any insulating material—allowing for rapid prototyping of a variety of novel detector materials. We present the two-stage cryogenic amplifier design, preliminary voltage noise performance, and estimated charge resolution of 7.2 electrons. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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