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Abstract: Lattice-matched Ga0.47ln0.53As/InP heterostructure was grown by atmosphericpressure metalorganic vapor phase epitaxy reaction system using monovalent cyclopentadienyl indium. The lattice-matched heterostructure showed electron mobilities ofμ300K= 12700 cm2/Vs at n8= 4.2 x 1011 cm-2 and μ77K= 108000 cm2/Vs at n8 = 3.9 x 1011 cm-2. The uniformity in electrical properties was measured by Hall element array with 400 μm pitch. Coefficient of variation in electron mobility was 0.18%.