170 results on '"Ren, F."'
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2. Growth and Characterization of GaN Nanowires for Hydrogen Sensors
3. ZnO and Related Materials for Sensors and Light-Emitting Diodes
4. Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors
5. Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates
6. Ir Diffusion Barriers in Ni/Au Ohmic Contacts to p-Type CuCrO2
7. Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN
8. Improved Long-Term Thermal Stability At 350°C Of TiB2–Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors
9. Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes
10. Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System
11. Annealing and Measurement Temperature Dependence of W2B- and W2B5-Based Rectifying Contacts to p-GaN
12. Effect of Cryogenic Temperature Deposition of Various Metal Contacts on Bulk Single-Crystal n-Type ZnO
13. ZnO spintronics and nanowire devices
14. Annealing temperature dependence of TiB2 schottky barrier contacts on n-GaN
15. Electrical transport properties of single GaN and InN nanowires
16. Si-diffused GaN for enhancement-mode GaN mosfet on si applications
17. Comparison of laser-wavelength operation for drilling of via holes in AlGaN/GaN HEMTs on SiC substrates
18. Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO
19. Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN
20. Fabrication approaches to ZnO nanowire devices
21. Design of edge termination for GaN power Schottky diodes
22. Proton irradiation of ZnO schottky diodes
23. AIN-based dilute magnetic semiconductors
24. Lateral schottky GaN rectifiers formed by Si+ ion implantation
25. SiC via holes by laser drilling
26. Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes
27. Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
28. GaN and other materials for semiconductor spintronics
29. High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors
30. Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures
31. Comparison of F2 plasma chemistries for deep etching of SiC
32. Plasma damage in p-GaN
33. Dry etch selectivity of Gd2O3 to GaN and AlN
34. UV-photoassisted etching of GaN in KOH
35. Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability
36. Improved sidewall morphology on dry-etched SiO2 masked GaN features
37. Comparison of ECR plasma chemistries for etching of InGaP and AlGaP
38. Comparison of dry etching of III-V semiconductors in ICl/Ar and IBr/Ar electron cyclotron resonance plasmas
39. Effect of dry etching on surface properties of III-nitrides
40. Dry etching of III-V semiconductors in IBr/Ar electron cyclotron resonance plasmas
41. Hydrogen passivation in n- and p-type 6H-SiC
42. Formation of dry etched gratings in GaN and InGaN
43. Dry etching of InGaAlP alloys in Cl2/Ar high ion density plasmas
44. The incorporation of hydrogen into III-V nitrides during processing
45. Plasma and wet chemical etching of In0.5Ga0.5P
46. Dopant incorporation in GaAs and AlGaAs grown by MOMBE for high speed devices
47. Ohmic contacts ton-type In0.5Ga0.5P
48. Use of pt gate metallization to reduce gate leakage current in GaAs MESFETs
49. Improvedn-type GaAs ohmic contacts compatible with a chlorine-based dry-etch process
50. Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3.
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