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7. Optical Characterization of Si-Based Ge1−x Sn x Alloys with Sn Compositions up to 12%

Author

Al-Kabi, Sattar, primary, Ghetmiri, Seyed Amir, additional, Margetis, Joe, additional, Du, Wei, additional, Mosleh, Aboozar, additional, Alher, Murtadha, additional, Dou, Wei, additional, Grant, Joshua M., additional, Sun, Greg, additional, Soref, Richard A., additional, Tolle, John, additional, Li, Baohua, additional, Mortazavi, Mansour, additional, Naseem, Hameed A., additional, and Yu, Shui-Qing, additional

Published
2015
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8. Optical Characterization of Si-Based GeSn Alloys with Sn Compositions up to 12%.

Author

Al-Kabi, Sattar, Ghetmiri, Seyed, Margetis, Joe, Du, Wei, Mosleh, Aboozar, Alher, Murtadha, Dou, Wei, Grant, Joshua, Sun, Greg, Soref, Richard, Tolle, John, Li, Baohua, Mortazavi, Mansour, Naseem, Hameed, and Yu, Shui-Qing

Subjects
GERMANIUM, RAMAN spectra, WAVELENGTHS, PHOTOLUMINESCENCE, THIN films, BAND gaps
Abstract

Optical properties of germanium tin (GeSn) alloys have been comprehensively studied with Sn compositions from 0 (Ge) to 12%. Raman spectra of the GeSn samples with various Sn compositions were measured. The room temperature photoluminescence (PL) spectra show a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Temperature dependent PL shows the PL intensity variation along with the temperature change, which reveals the indirectness or directness of the bandgap of the material. As temperature decreases, the PL intensity decreases with Sn composition less than 8%, indicating the indirect bandgap GeSn; while the PL intensity increases with Sn composition higher than 10%, implying the direct bandgap GeSn. Moreover, the PL study of n-doped samples shows bandgap narrowing compared to the unintentionally (Boron) doped thin film with similar Sn compositions due to the doping. [ABSTRACT FROM AUTHOR]

Published
2016
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