1. Interface observation in Au/Ni/p-GaN studied by HREM and energy-filtering TEM
- Author
-
Sung-Hwan Lim, Won Yong Kim, and Tae-Yeub Ra
- Subjects
High resolution electron microscopy ,Materials science ,law ,Annealing (metallurgy) ,Contact resistance ,Non-blocking I/O ,Analytical chemistry ,Electron microscope ,Microstructure ,Instrumentation ,Ohmic contact ,law.invention - Abstract
The contact resistance of Au/Ni/p-GaN ohmic contacts for different annealing conditions was measured. This was then correlated with microstructure, including phase distribution, observed by high-resolution electron microscopy combined with energy-filtering imaging. A contact resistance of 2.22 x 10(-4) ohms cm2 for Au/Ni contacts to p-GaN after annealing at 500 degrees C for 5 min in air ambient was obtained. NiO layers were identified at the interface and upper area of annealed Ni/Au/p-GaN for air ambient. In addition, an Au layer was found at the interface of p-GaN due to a reversal reaction during annealing. Identification of the observed phases is discussed, along with possible formation mechanisms for the ohmic contacts in the Au/Ni/p-GaN system.
- Published
- 2003