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The quantum dot light-emitting diode (QLED) is a promising candidate for the display and lighting applications. The fabrication of such devices by solution processing allows considerable cost reduction and is therefore very attractive for industrial manufacturers. In this paper, we report on the all solution-processed inverted QLEDs by incorporating with the solvent modified PEDOT:PSS. The effect of isopropanol (IPA) doping concentration in the PEDOT:PSS hole injection layer (HIL) on device performance was investigated, with the aim of facilitating the surface hydrophilicity and hole transport rate between HIL and hole transfer layer. It is demonstrated that the optimal amount of IPA doped in the HIL can significantly improve the performance of QLEDs in this study.

Colloidal quantum dots (QDs) with a ZnO core were synthesized with subsequent surface passivation by MgO. The photo-enhancement effect of the near band-edge photoluminescence (PL) in ZnO nanocrystals, dispersed in ethanol, is investigated by observing changes in the optical properties after ultraviolet (UV) exposure. Finally, the operation as a light-emitting device (LED) was demonstrated experimentally for these ZnO-based quantum dots (QDs). The results indicate that this type of QDs might enable the development of electroluminescent UV sources in the near future.