1. Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
- Author
-
Hong Jiang, Yixin Jin, Guang Yuan, Yongqiang Ning, Shuwei Li, Yuan Tian, Tianming Zhou, and Baolin Zhang
- Subjects
Electron mobility ,Atmospheric pressure ,Stereochemistry ,Chemistry ,Analytical chemistry ,Condensed Matter Physics ,Thermal conduction ,Inorganic Chemistry ,Hall effect ,Materials Chemistry ,Metalorganic vapour phase epitaxy ,Thin film ,Chemical composition ,Solid solution - Abstract
MOCVD growth and characterization of InAs-rich GaInAsSb on GaSb substrates was investigated. High quality mirror-like surfaces with a minimum lattice mismatch of 0.4% was obtained. The surface of InAs-rich GaInAsSb epilayer shows morphological features much different from that of GaSb-rich films. Solid compositions of InAs-rich films were dependent on growth temperature. InAs-rich GaInAsSb shows n-type conduction, which is the opposite of GaSb-rich samples. A room temperature electron mobility of 5000 cm(2)/V.s with electron concentration of 3.6 x 10(17) cm(-3) was obtained. (C) 1998 Elsevier Science B.V. All rights reserved.
- Published
- 1998