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Abstract: Two depletion-mode GaAs-based metal–oxide–semiconductor field-effect transistor (MOSFETs) were made with molecular beam epitaxy (MBE) grown Ga2O3(Gd2O3) as the gate dielectric on different channel structures. The depletion-mode GaAs MOSFETs with a gate length of 1.6μm show an accumulated drain current density of 335mA/mm at V G up to 4V. The In0.15Ga0.85As/GaAs MOSFET, with a 4-Å-thick amorphous Si cap layer exhibits a large drain current density of 510mA/mm at V G up to 2V. The output characteristics measured by a curve tracer show no I–V hysteresis and drain current drift. These excellent device characteristics were resulted from a high-quality, low-trap interface between Ga2O3(Gd2O3) and the channels. [Copyright &y& Elsevier]