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A mid-infrared LiInSe 2 (LISe) single crystal was successfully grown by the modified vertical Bridgman technique with dimensions of about ∅12 mm×30 mm. A large amount of high purity polycrystalline LISe used for crystal growth was synthesized in one run by a novel two-step synthesis method. The thermal properties of the crystal were carefully investigated by measuring the melting point, specific heat, and thermal diffusivity, and deriving the thermal conductivity. The transmission spectrum showed that the 50% transmittance level extends from 0.65 to 12.6 μm. The excellent thermal conductivity and optical properties indicate that LISe is one of only a few promising candidates for high average power nanosecond OPOs pumped by ~1 μm lasers.

The metal–ferroelectric–insulator–semiconductor (MFIS) structure has been fabricated using Bi 3.54 Nd 0.46 Ti 3 O 12 (BNdT) as a ferroelectric layer. The BNdT films can crystallize well at 700°C for 1 h. The J – V curve shows the MFIS structure has a good insulating property. C – V hysteresis loops at various sweeping speed were collected as were polarization types. The leakage current density, dielectric constant and dielectric loss were found to be dependent on the annealing temperature. The dielectric constant and dielectric loss at a frequency of 100 kHz are 98 and 0.092, respectively.