37 results on '"Speck, James S."'
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2. High nitrogen flux plasma-assisted molecular beam epitaxy growth of InxGa1-xN films
3. Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal
4. High germanium doping of GaN films by ammonia molecular beam epitaxy
5. An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures
6. High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution
7. Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers
8. Growth of N-polar GaN by ammonia molecular beam epitaxy
9. Analysis of Vegard’s law for lattice matching InxAl1−xN to GaN by metalorganic chemical vapor deposition
10. Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth
11. Growth study and impurity characterization of Al xIn 1− xN grown by metal organic chemical vapor deposition
12. Effect of indium on the physical vapor transport growth of AlN
13. Ammonothermal growth of bulk GaN
14. Status and perspectives of the ammonothermal growth of GaN substrates
15. Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)
16. Seeded growth of GaN by the basic ammonothermal method
17. Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy
18. Erratum to “High indium content homogenous InAlN layers grown by plasma assisted molecular beam epitaxy” [J. Cryst. Growth 454 (2016) 164–172]
19. Acidic ammonothermal growth of gallium nitride in a liner-free molybdenum alloy autoclave
20. A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes
21. On the solubility of gallium nitride in supercritical ammonia–sodium solutions
22. A new system for sodium flux growth of bulk GaN. Part I: System development
23. Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN
24. High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy
25. Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202¯1) AlGaN/GaN buffer layers
26. Onset of plastic relaxation in semipolar (112¯2) In Ga1−N/GaN heterostructures
27. Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6 µm/h
28. Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates
29. Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy
30. Growth study and impurity characterization of Al In1−N grown by metal organic chemical vapor deposition
31. Phase selection of microcrystalline GaN synthesized in supercritical ammonia
32. Growth of gallium nitride via fluid transport in supercritical ammonia
33. Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes
34. Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates
35. Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic ([formula omitted]) AlGaN/GaN buffer layers.
36. Onset of plastic relaxation in semipolar ( ) In x Ga1−x N/GaN heterostructures.
37. Growth study and impurity characterization of Al x In1−x N grown by metal organic chemical vapor deposition
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