25 results on '"Roberts, J.S."'
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2. Low threshold InP/AlGaInP on GaAs QD laser emitting at ∼740 nm
3. Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/AlGaInP MQW structure
4. MOVPE-grown quantum cascade lasers operating at ∼9 μm wavelength
5. 1070 nm and 1118 nm high power lasers grown with partial strain balancing
6. Synthesis of oxygen-free trimethylindium using second generation adduct purification techniques
7. MOVPE-grown quantum cascade lasers operating at ∼9μm wavelength
8. The influence of trimethylindium impurities on the performance of InAlGaAs single quantum well lasers
9. High power, high speed surface emitting LEDs with an InGaAs quantum well
10. Optical properties of MOVPE grown Al Ga1−As quantum wells
11. Visible (683 to 713 nm) room-temperature AlGaAs vertical cavity surface emitting lasers (VCSELs)
12. High-purity AlGaAs from methyl-based precursors using in-situ gettering of alkoxides
13. The incorporation of oxygen into InAlAs, the role of trimethylindium (TMI)
14. Oxygen incorporation in aluminium-based semiconductors grown by metalorganic vapour phase epitaxy
15. High performance microcavity resonator devices grown by atmospheric pressure MOVPE
16. AlGaAs/GaAs p-MODFET materials grown using intrinsic carbon doping
17. MOVPE growth of AlGaAs using trimethylamine alane
18. Growth of AlxGa1-xAs by MOVPE using alternative alkylaluminium precursors
19. Optical properties of MOVPE grown AlxGa1−xAs quantum wells
20. Growth and characterisation of quantum wells and selectively doped heterostructures of InP/Ga0.47In0.53As grown by solid source MBE
21. Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAs
22. Growth of AlxGa1−xAs by MOVPE using a new alkylaluminium precursor
23. MOVPE grown MQW pin diodes for electro-optic modulators and photodiodes with enhanced electron ionisation coefficient
24. Growth of Al xGa 1−xAs by MOVPE using a new alkylaluminium precursor
25. Growth and characterisation of quantum wells and selectively doped heterostructures of InP/Ga 0.47In 0.53As grown by solid source MBE
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