Search

We report on a standard molecular beam epitaxial (MBE) system devoted to the growth on InP substrates and which is equipped with arsenic and phosphorus solid sources. Procedures were developed to handle phosphorus. The major donor impurity in InP epilayers was identified. The phosphorus source was applied to the InP substrate desoxidation under P 2 , and to the continuous growth of arsenide and phosphide layers. Low cross contamination by As or P was achieved by using valved cells. We introduced phosphide layers in structures for devices (lasers, photodetectors, heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs). This allowed us to improve the device performance.