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MBE-grown CdTe/InSb/CdTe single quantum wells were characterized by TEM, FTIR and photoconduction. Even in the presence of In, Te related compounds and CdTe buffer-width dependent Fabry-Perot interference, a step-like quantum size effect was observed in the SQW FTIR data. The photocurrent peaks are also attributable to quantum well intersubband transitions due to higher subband energy levels. With the improvement of the CdTe/InSb interface in mind, we studied the characteristics of α-Sn layers grown on top of CdTe. TEM pictures show that the propagation of dislocation planes originating from the CdTe buffer layer is stopped at the α-Sn/CdTe heterointerface.

The effect of the exposure of GaAs and AlInP surfaces to phosphorus and arsenis beams were studied using HR-TEM, RHEED, XPS, AES, and Raman scattering. The GaAs surface was found to be fairly reactive with respect to the phosphorus beam. The exposure of GaAs to a phosphorus beam for 60 s caused a surface roughness of at least 20 A, caused by the formation of a GaP-rich island. However, a flat surface of AlInP was found to be structurally stable with respect to the arsenic beam. The arsenic beam was found to induce a replacement of a few percent of P atoms by As atoms in an AlInP surface layer. An atomically flat AlInP-on-GaAs interface was obtained by a sequence in which the GaAs surface was not exposed to a P beam.