1. Growth study of thin indium nitride layers on InP (100) by Auger electron spectroscopy and photoluminescence
- Author
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F. Saidi, Hassen Maaref, F. Hassen, Christine Robert-Goumet, Bernard Gruzza, S. Ben Khalifa, Luc Bideux, Institut Pascal (IP), SIGMA Clermont (SIGMA Clermont)-Centre National de la Recherche Scientifique (CNRS)-Université Clermont Auvergne [2017-2020] (UCA [2017-2020]), Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des sciences et matériaux pour l'électronique et d'automatique (LASMEA), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Micro-optoélectronique et Nanostructures [Monastir], Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM)-Université de Monastir - University of Monastir (UM), and SIGMA Clermont (SIGMA Clermont)-Université Clermont Auvergne [2017-2020] (UCA [2017-2020])-Centre National de la Recherche Scientifique (CNRS)
- Subjects
010302 applied physics ,Auger electron spectroscopy ,Glow discharge ,Photoluminescence ,Indium nitride ,Chemistry ,Band gap ,Exciton ,Analytical chemistry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Inorganic Chemistry ,chemistry.chemical_compound ,0103 physical sciences ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Materials Chemistry ,Indium phosphide ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,0210 nano-technology ,Spectroscopy ,ComputingMilieux_MISCELLANEOUS - Abstract
This article investigates the growth of InN layers on (1 0 0) InP in ultra-high vacuum using a glow discharge source (GDS). Auger electron spectroscopy (AES) was used to understand the different steps of the nitridation process with the analysis of In-MNN, N-KLL and P-LMM transitions. A modeling of Auger signals using a stacked layers model allows us to confirm that four monolayers of indium nitride are created on (1 0 0) InP. InN layers grown on (1 0 0) InP were studied optically by photoluminescence (PL) spectroscopy versus the excitation power and the sample temperature (10–300 K). Results show broad spectral band energy close to the lowest reported InN bandgap. The temperature dependence of the PL peak energy showed a S-shaped behavior (decrease–increase–decrease). The results suggest that the InN-related emission is significantly affected by the change in carrier dynamics with increasing temperature: the effect can be due to the large exciton localization effects.
- Published
- 2009